公开(公告)号：US20240217868A1

公开(公告)日：2024-07-04

申请号：US18090505

申请日：2022-12-29

Applicant: Industrial Technology Research Institute

Inventor： Hao-Wen Cheng ,  Ming-Huei Yen ,  Wen-Jin Li ,  Yu-Ting Guan ,  Ding-Shiang Wang

IPC: C03C15/00 ,  H01L21/3213

CPC classification number: C03C15/00 ,  H01L21/32134

Abstract: A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.

公开(公告)号：US20220130751A1

公开(公告)日：2022-04-28

申请号：US17131771

申请日：2020-12-23

Applicant: Industrial Technology Research Institute

Inventor： Ming-Huei Yen ,  Wen-Jin Li ,  Zi-Ting Lin ,  Yu-Ling Chang

IPC: H01L23/498 ,  H01L23/373 ,  B32B15/01 ,  B32B15/20

Abstract: A copper plating structure and a package structure including the same are provided, and the copper plating structure includes at least one first copper layer and at least one second copper layer. The first copper layer includes a (111) crystal plane, wherein a proportion of the (111) crystal plane in each of the first copper layers is 36% to 100%. The second copper layer is located on the first copper layer and includes a non-(111) crystal plane or includes a (111) crystal plane and a non-(111) crystal plane, wherein a proportion of the (111) crystal plane in each of the second copper layers is 0% to 57%.