公开(公告)号：US10132877B2

公开(公告)日：2018-11-20

申请号：US14576203

申请日：2014-12-19

Applicant: Industrial Technology Research Institute

Inventor： Chung-Yuan Su ,  Chao-Ta Huang ,  Sheng-Ren Chiu

IPC: G01C19/5712 ,  G01R33/02

Abstract: A micro-electromechanical apparatus may include a substrate, a first frame, a plurality of first anchors, a region and a plurality of pivot elements. The plurality of first anchors and the region is disposed on the substrate. The region is surrounded by the plurality of first anchors. Each of the pivot elements includes a pivot end and a rotary end. Each of the pivot ends is connected to a corresponding first anchor and each of the rotary ends is connected to the first frame such that the first frame is able to rotate with respect to an axis passing the region. The micro-electromechanical apparatus having the pivot elements and the region is adapted for detecting multi-degree physical quantities such as angular velocities in at least two axes, angular velocities and accelerations, angular velocities and Earth's magnetic field.

公开(公告)号：US09966394B2

公开(公告)日：2018-05-08

申请号：US15084494

申请日：2016-03-30

Applicant: Industrial Technology Research Institute

Inventor： Feng-Chia Hsu ,  Yu-Sheng Lin ,  Chun-Yin Tsai ,  Sheng-Ren Chiu

IPC: H01L27/144 ,  H01L31/0216 ,  H01L31/024 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/18 ,  G01J5/02 ,  G01J5/10 ,  G01J5/12 ,  G01J5/20

CPC classification number: H01L27/1443 ,  G01J5/023 ,  G01J5/024 ,  G01J5/10 ,  G01J5/12 ,  G01J5/20 ,  H01L31/02005 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/024 ,  H01L31/18

Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

公开(公告)号：US20170186786A1

公开(公告)日：2017-06-29

申请号：US15084494

申请日：2016-03-30

Applicant: Industrial Technology Research Institute

Inventor： Feng-Chia Hsu ,  Yu-Sheng Lin ,  Chun-Yin Tsai ,  Sheng-Ren Chiu

IPC: H01L27/144 ,  H01L23/522 ,  H01L23/532 ,  H01L31/18 ,  H01L31/024 ,  H01L31/02 ,  H01L31/0232 ,  H01L23/528 ,  H01L31/0216

CPC classification number: H01L27/1443 ,  G01J5/023 ,  G01J5/024 ,  G01J5/10 ,  G01J5/12 ,  G01J5/20 ,  H01L31/02005 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/024 ,  H01L31/18

Abstract: A light sensing device includes a substrate, a semiconductor device layer, a metal and insulation material stacked structure, and a light absorption layer. The substrate has a recessed portion. The semiconductor device layer is located on the substrate. The metal and insulation material stacked structure is located on the semiconductor device layer and includes a first interconnect structure, a second interconnect structure surrounding the first interconnect structure, and a device conductive line. The light absorption layer is located on the metal and insulation material stacked structure. The first interconnect structure is located between the light absorption layer and the semiconductor device layer, such that the light absorption layer and the semiconductor device layer located at different levels can be connected to each other and exchange heat.

公开(公告)号：US20150308830A1

公开(公告)日：2015-10-29

申请号：US14576203

申请日：2014-12-19

Applicant: Industrial Technology Research Institute

Inventor： Chung-Yuan Su ,  Chao-Ta Huang ,  Sheng-Ren Chiu

IPC: G01C21/10 ,  G01R33/02 ,  G01C19/5712

CPC classification number: G01R33/02 ,  G01C19/5712

Abstract: A micro-electromechanical apparatus may include a substrate, a first frame, a plurality of first anchors, a region and a plurality of pivot elements. The plurality of first anchors and the region is disposed on the substrate. The region is surrounded by the plurality of first anchors. Each of the pivot elements includes a pivot end and a rotary end. Each of the pivot ends is connected to a corresponding first anchor and each of the rotary ends is connected to the first frame such that the first frame is able to rotate with respect to an axis passing the region. The micro-electromechanical apparatus having the pivot elements and the region is adapted for detecting multi-degree physical quantities such as angular velocities in at least two axes, angular velocities and accelerations, angular velocities and Earth's magnetic field.

Abstract translation: 微机电设备可以包括基板，第一框架，多个第一锚固件，区域和多个枢轴元件。 多个第一锚固件和区域设置在基板上。 该区域被多个第一锚点包围。 每个枢轴元件包括枢转端和旋转端。 每个枢转端连接到对应的第一锚定器，并且每个旋转端连接到第一框架，使得第一框架能够相对于经过该区域的轴线旋转。 具有枢转元件和区域的微机电装置适于检测多度物理量，例如至少两个轴上的角速度，角速度和加速度，角速度和地球磁场。