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1.发明申请公开(公告)号：US20150303368A1
公开(公告)日：2015-10-22
申请号：US14332307
申请日：2014-07-15
Applicant: Industrial Technology Research Institute
Inventor： Kun-Ping Huang , Hsi-Chuan Chen , Chiang-Hsiung Tong , Chih-Wei Luo , Wen-Yen Tzeng
CPC classification number: H01L39/2448 , H01L39/02 , H01L39/2438
Abstract: A method of repairing defect in a superconducting film, a method of coating a superconducting film, and a superconducting film formed by the method are prepared. The method of repairing defect includes detecting the superconducting film during a manufacturing process thereof. When a defect therein is detected, a repairing structure with superconductivity is formed on a position of the defect.
Abstract translation: 制备修复超导膜中的缺陷的方法，涂覆超导膜的方法以及通过该方法形成的超导膜。 修补缺陷的方法包括在其制造过程中检测超导膜。 当检测到缺陷时，在缺陷的位置上形成具有超导性的修复结构。
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公开(公告)号：US20170162731A1
公开(公告)日：2017-06-08
申请号：US14983596
申请日：2015-12-30
Applicant: Industrial Technology Research Institute
Inventor： Chia-Wen Chang , Wei-Sheng Lin , Sung-Yu Chen , Hsi-Chuan Chen
IPC: H01L31/032 , H01L31/0203 , H01L31/0224
CPC classification number: H01L31/032 , H01L31/0203 , H01L31/022466 , H01L31/0322 , H01L31/043 , H01L31/0445 , H01L31/048 , Y02E10/541
Abstract: A PV module includes a transparent substrate, a first solar cell unit, a crystalline silicon solar cell, and a spacer. The first solar cell unit is between the transparent substrate and the crystalline silicon solar cell, and the first solar cell unit includes a first electrode, a second electrode, and a I-III-VI semiconductor layer between the first electrode and the second electrode. The I-III-VI semiconductor layer includes at least gallium (Ga) and sulfur (S), and the energy gap thereof is more than that of crystalline silicon. Moreover, the crystalline silicon solar cell and the first solar cell unit are separated by the spacer.
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公开(公告)号：US20170323986A1
公开(公告)日：2017-11-09
申请号：US15653534
申请日：2017-07-19
Applicant: Industrial Technology Research Institute
Inventor： Chia-Wen Chang , Wei-Sheng Lin , Sung-Yu Chen , Hsi-Chuan Chen
IPC: H01L31/032 , H01L31/0224 , H01L31/0203
CPC classification number: H01L31/032 , H01L31/0203 , H01L31/022466 , H01L31/0322 , H01L31/043 , H01L31/0445 , H01L31/048 , Y02E10/541
Abstract: A PV module includes a transparent substrate, a first solar cell unit, a crystalline silicon solar cell, and a spacer. The first solar cell unit is between the transparent substrate and the crystalline silicon solar cell, and the first solar cell unit includes a first electrode, a second electrode, and a I-III-VI semiconductor layer between the first electrode and the second electrode. The I-III-VI semiconductor layer includes at least gallium (Ga) and sulfur (S), and the energy gap thereof is more than that of crystalline silicon. Moreover, the crystalline silicon solar cell and the first solar cell unit are separated by the spacer.
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