SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

    公开(公告)号:US20220376101A1

    公开(公告)日:2022-11-24

    申请号:US17427923

    申请日:2021-02-25

    Abstract: A semiconductor device includes a drain electrode, a first source electrode, a second source electrode, a first gate electrode, and a second gate electrode. The first gate electrode is arranged between the first source electrode and the drain electrode. The first gate electrode extends along a first direction. The second gate electrode is arranged between the second source electrode and the drain electrode. The second gate electrode extends along the first direction. The first gate electrode is arranged above a first imaginary line substantially perpendicular to the first direction in a top view of the semiconductor device and the second gate electrode is arranged below a second imaginary line substantially perpendicular to the first direction in the top view of the semiconductor device.

    NITRIDE-BASED SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220359454A1

    公开(公告)日:2022-11-10

    申请号:US17567845

    申请日:2022-01-03

    Abstract: The present disclosure provides a semiconductor module comprising a semiconductor device removably pressed-fit in a cavity formed in a printed circuit board and methods for manufacturing the same. The semiconductor device and the cavity of the printed circuit board can cooperate with each other and act as an electrical plug and an electrical socket respectively. Soldering the semiconductor device on the printed circuit board can be avoided. Therefore, the packaging process can be more flexible and reliability issues with solder joints can be eliminated. Moreover, heatsink can be mounted on top and/or bottom of the semiconductor device after being received in the cavity of the printed circuit board. Thermal dissipation efficiency can be greatly enhanced.

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