专利检索 ap:("II-VI Delaware, Inc.") AND inv:"Jeremy Turcaud" 第 1 页

1.

发明公开
SYSTEMS AND METHODS FOR ALUMINUM ION BEAM GENERATION SOURCE TECHNOLOGY 审中-公开

公开(公告)号：US20240266143A1

公开(公告)日：2024-08-08

申请号：US18426555

申请日：2024-01-30

申请人： II-VI Delaware, Inc.

发明人： Ahmet Hassan , Raymond Pong , Jeremy Turcaud , John Schuur

IPC分类号： H01J37/317 , H01L21/04

CPC分类号： H01J37/3171 , H01L21/046

摘要： An implantation device is disclosed. In particular, an implantation device includes an ionization chamber having a cathode and a repeller arranged therein. A source of aluminum ions is including within the chamber, wherein a displacing gas is introduced to the chamber during an ionization process to yield a beam of energetic aluminum ions.