公开(公告)号：US11521674B2

公开(公告)日：2022-12-06

申请号：US17217570

申请日：2021-03-30

Applicant: Huawei Technologies Co., Ltd.

Inventor： Kraft Kira ,  Mathew Deepak ,  Chirag Sudarshan ,  Jung Matthias ,  Weis Christian ,  Norbert Wehn ,  Florian Longnos ,  Gezi Li ,  Wei Yang

IPC: G11C11/4096 ,  G06F11/10 ,  G06F12/02 ,  G06F13/16

Abstract: A memory access method and a computer system are provided. According to the memory access method, whether to flip the to-be-stored data for storage may be determined based on quantities of “1” and “0” in data to be written into a dynamic random access memory (DRAM) and a storage mode of the DRAM, to reduce a quantity of storage cells with high electric charges in the DRAM, thereby reducing a data error probability.