公开(公告)号：US20220099755A1

公开(公告)日：2022-03-31

申请号：US17355948

申请日：2021-06-23

Applicant: Hitachi, Ltd.

Inventor： Tomohiko YANO ,  Takashi KAWAMOTO ,  Hideyuki NAGAISHI

IPC: G01R31/52 ,  G01R1/067 ,  H02H1/00 ,  H02H3/20

Abstract: A leakage voltage detection system can be easily mounted on a ground structure such as an existing street light or a traffic light and can detect a leakage voltage of an electric structure in real time. The leakage voltage detection system includes a sensor node mounted on a ground structure, and an equipment management server that determines a risk of a leakage voltage in the ground structure based on detection voltage information from the sensor node. The sensor node includes an electric field probe that measures a potential difference caused by an electric field detected by electrodes, and a sensor box that detects the potential difference between the electrodes of the electric field probe and transmits the potential difference to the equipment management server as a detection voltage. The equipment management server determines the risk of the leakage voltage where the sensor node is mounted based on the received detection voltage from the sensor node, and outputs information on determination of the risk of the leakage voltage.

公开(公告)号：US20130333617A1

公开(公告)日：2013-12-19

申请号：US13916820

申请日：2013-06-13

Applicant: Hitachi, Ltd.

Inventor： Hiroyuki KOBAYASHI ,  Tetsuya SUZUKI ,  Mayui NOBORISAKA ,  Hideyuki NAGAISHI ,  Hisanori MATSUMOTO

IPC: C23C16/503

CPC classification number: C23C16/503 ,  H01J37/32348

Abstract: A plasma processing apparatus is provided in which film formation to a part other than a process target is suppressed, and a film formation process to the process target can be uniformly performed. The plasma processing apparatus includes a high-frequency power supply for plasma generation, a surface discharge type discharge electrode including two kinds of electrodes in one dielectric surface of a dielectric layer. The process target is brought into close contact with a discharge-surface-side surface of the discharge electrode, and a plasma is generated in a vicinity of a front surface of the process target. When a height of a surface of the dielectric layer just above the electrode is H2, and a height of a surface of the dielectric layer between the electrode and the electrode is H1, H1>H2 is established.

Abstract translation: 提供了一种等离子体处理装置，其中抑制了除了处理靶之外的部分的成膜，并且可以均匀地进行到处理靶的成膜处理。 等离子体处理装置包括用于等离子体产生的高频电源，在电介质层的一个电介质表面中包括两种电极的表面放电型放电电极。 使处理靶与放电电极的放电表面侧表面紧密接触，并且在处理靶的前表面附近产生等离子体。 当刚好在电极上方的电介质层的表面的高度为H 2，并且电极和电极之间的电介质层的表面的高度为H1时，建立H1> H2。

公开(公告)号：US20130098556A1

公开(公告)日：2013-04-25

申请号：US13654572

申请日：2012-10-18

Applicant: HITACHI, LTD.

Inventor： Hiroyuki KOBAYASHI ,  Hideyuki NAGAISHI ,  Takumi TANDOU ,  Naoshi ITABASHI

IPC: C23C16/509 ,  B08B13/00

CPC classification number: H01J37/32174 ,  B08B7/0035 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32366 ,  H01J37/32376 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32577 ,  H01J37/32899 ,  H01J2237/335

Abstract: There is provided a plasma processing apparatus that can generate uniform plasma without increasing costs per unit electric power even though the discharge area is increased to adapt to samples in given sizes by arranging a plurality of plasma discharge units. A plasma processing apparatus includes an RF power supply having an RF signal circuit and an RF power circuit, a case, and a discharge electrode. A plasma module is configured of the discharge electrode and the RF power circuit provided in the case. A frequency signal from the RF signal circuit is inputted to a plurality of the plasma modules connected in parallel with each other.

Abstract translation: 提供了一种等离子体处理装置，其可以产生均匀的等离子体，而不增加每单位电力的成本，即使通过布置多个等离子体放电单元来增加放电面积以适应给定尺寸的样品。 等离子体处理装置包括具有RF信号电路和RF功率电路的RF电源，外壳和放电电极。 等离子体模块由设置在该壳体中的放电电极和RF电源电路构成。 来自RF信号电路的频率信号被输入到彼此并联连接的多个等离子体模块。