公开(公告)号：US06340390B1

公开(公告)日：2002-01-22

申请号：US09585466

申请日：2000-06-02

Applicant: Hiroshi Asano ,  Yukio Sugimoto ,  Fusao Tabata

Inventor： Hiroshi Asano ,  Yukio Sugimoto ,  Fusao Tabata

IPC: C03B1520

CPC classification number: C30B29/06 ,  C30B15/00

Abstract: A method for manufacturing a silicon single crystal. In this method, silicon material melting is performed in a furnace having an internal pressure between 60 and 400 mbar. The subsequent single crystal pulling is performed in a furnace having an internal pressure which is lower than the pressure when the silicon material is molten, but not exceeding 95 mbar. This method prevents production of a defective single crystal which results from the formation of pinholes, prevents dislocation of the single crystal which results from bubbles and impurities present in silicon melting solution, and prevents dislocation of the single crystal which results from evaporation of the SiO.

Abstract translation: 一种制造硅单晶的方法。 在该方法中，在内部压力在60至400毫巴之间的炉子中进行硅材料熔化。 随后的单晶拉制在内部压力低于硅材料熔融时的压力但不超过95毫巴的炉中进行。 该方法防止由于形成针孔而产生的有缺陷的单晶，防止由硅熔融溶液中存在的气泡和杂质引起的单晶错位，并防止由SiO的蒸发引起的单晶错位。