公开(公告)号：US20230317526A1

公开(公告)日：2023-10-05

申请号：US17657835

申请日：2022-04-04

申请人： HeFeChip Corporation Limited

发明人： LIANG LI ,  Chun Yu Wong ,  John Zhang ,  HUANG LIU ,  Sunil Singh ,  Heng Yang

IPC分类号： H01L21/84 ,  H01L27/12

CPC分类号： H01L21/845 ,  H01L27/1211

摘要： The present invention proposes a semiconductor device. The semiconductor device includes a first and a second transistor sets, a fin pattern, a rare earth oxide layer and an insulation layer. The first and a second transistor sets commonly have at the bases thereof a buried oxide layer (BOX), wherein the first transistor set has a rare earth oxide. The fin pattern on the BOX within a first region for the first transistor set and a second region for the second transistor set. The rare earth oxide layer includes the rare earth oxide and is formed on the BOX and the fin pattern in the first region. The insulation layer is formed on the rare earth oxide layer in the first region, the BOX and the fin pattern in the second region.

公开(公告)号：US20230290855A1

公开(公告)日：2023-09-14

申请号：US17654422

申请日：2022-03-11

申请人： HeFeChip Corporation Limited

发明人： John H Zhang ,  Chun Yu Wong ,  Sunil K Singh ,  Liang Li ,  Heng Yang

IPC分类号： H01L29/51 ,  H01L29/66

CPC分类号： H01L29/515 ,  H01L29/6653

摘要： The invention discloses a transistor structure including a substrate, a semiconductor layer disposed on the substrate and a gate layer disposed on the semiconductor layer, wherein the gate layer includes at least one gate having a first height, a first side and a second side opposite to the first side, a first dielectric spacer is disposed at the first side of the at least one gate, a first air spacer having a second height is disposed inside the first dielectric spacer, and the second height is lower than the first height.