High Side Switch Gate Drive Apparatus and Control Method

    公开(公告)号:US20250150072A1

    公开(公告)日:2025-05-08

    申请号:US18386965

    申请日:2023-11-03

    Abstract: An apparatus includes a high side switch connected between an input voltage bus and a load terminal, the load terminal being configured to be coupled to a load, a high side gate drive circuit configured to generate a gate drive signal for the high side switch, and a resonance suppression circuit having a first terminal connected to a gate of the high side switch, and a second terminal connected to the load terminal, wherein after a predetermined delay counting from a falling edge of an enable signal applied to the high side gate drive circuit, the resonance suppression circuit is configured to be active, and after a voltage on the load terminal rises above a ground voltage potential for a first time, the resonance suppression circuit is configured to pull a voltage on the gate of the high side switch down to a low voltage.

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