公开(公告)号：US20240312789A1

公开(公告)日：2024-09-19

申请号：US18026095

申请日：2022-02-14

申请人： HITACHI HIGH-TECH CORPORATION

发明人： Takashi HATTORI ,  Masaki YAMADA ,  Keisuke AKINAGA

IPC分类号： H01L21/311 ,  H01J37/32 ,  H01L21/324

CPC分类号： H01L21/31116 ,  H01J37/32522 ,  H01J37/32816 ,  H01L21/324 ,  H01J2237/3344 ,  H01J2237/3346

摘要： A method for etching a silicon oxide film at a high selection ratio with respect to a silicon nitride film while a high etching rate of the silicon oxide film is balanced with a low etching rate of the silicon nitride film. The etching processing method is a dry etching processing method for etching a film without using plasma by supplying gas into a process chamber, the film having a side wall of a groove or a hole constituted by respective end parts of laminated film layers formed on a wafer, the laminated film layers including silicon oxide films each sandwiched between silicon nitride films, and in which the silicon oxide films are etched laterally from the end parts with the wafer being set to a low temperature equal to or less than (0.040x−42.0)° C. when a partial pressure of hydrogen fluoride gas is taken as x (Pa).