公开(公告)号：US20150116869A1

公开(公告)日：2015-04-30

申请号：US14067483

申请日：2013-10-30

Applicant: HGST NETHERLANDS B.V.

Inventor： Jun AOYAMA ,  Hiroyuki KATADA ,  Masato SHIIMOTO ,  Mikito SUGIYAMA ,  Yosuke URAKAMI

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G11B5/012 ,  G11B5/39 ,  G11B5/398 ,  H01L43/02

Abstract: Embodiments described herein generally relate to a magnetic read head wherein read sensitivity distribution is made asymmetric in the off-track direction. The method of making the magnetic head is also disclosed. The read head may comprise a magneto-resistive effect element with an asymmetric structure around the element in the off-track direction and the read sensitivity profile in the off-track direction may also be asymmetric.

Abstract translation: 本文描述的实施例通常涉及一种读磁头，其中读出灵敏度分布在偏离磁道方向上是不对称的。 还公开了制造磁头的方法。 读取头可以包括在偏离磁道方向上围绕元件的不对称结构的磁阻效应元件，并且偏离磁道方向的读取灵敏度分布也可以是不对称的。

公开(公告)号：US20150092303A1

公开(公告)日：2015-04-02

申请号：US14043219

申请日：2013-10-01

Applicant: HGST NETHERLANDS B.V.

Inventor： Jun AOYAMA ,  Masahiko HATATANI ,  Hiroyuki KATADA ,  Masato SHIIMOTO

IPC: G11B5/11

CPC classification number: G11B5/3912 ,  G11B5/11 ,  G11B5/398

Abstract: Embodiments of the present invention generally include magnetoresistive heads, such as read heads, having a sensor structure and side shields disposed adjacent to the sensor structure. The distance between the side shields and the sensor structure increase in a direction from an ABS in the off-track direction. The magnetoresistive heads may include tapered surfaces on the side shields or sensor structure, or may include stepped surfaces on the side shields or sensor structure.

Abstract translation: 本发明的实施例通常包括诸如读取头的磁阻头，具有传感器结构和邻近传感器结构设置的侧面屏蔽。 侧挡板和传感器结构之间的距离在离开轨道方向的ABS方向上增加。 磁阻头可以包括在侧屏蔽或传感器结构上的锥形表面，或者可以包括侧屏蔽或传感器结构上的台阶表面。

公开(公告)号：US20150092292A1

公开(公告)日：2015-04-02

申请号：US14040151

申请日：2013-09-27

Applicant: HGST Netherlands B.V.

Inventor： Masaru FURUKAWA ,  Jianhua LI ,  Masato MATSUBARA ,  Masato SHIIMOTO

IPC: G11B33/14 ,  G11B5/10

CPC classification number: G11B33/1433 ,  G11B5/314 ,  G11B2005/0024

Abstract: Embodiments of the present invention generally relate to a microwave assisted magnetic recording (MAMR) head. The MAMR head includes a main pole, a trailing shield, and a spin torque oscillator (STO) disposed between the main pole and the trailing shield. The STO is recessed from an air bearing surface.

Abstract translation: 本发明的实施例一般涉及微波辅助磁记录（MAMR）头。 MAMR头包括主极，后屏蔽和设置在主极和后屏蔽之间的自旋扭矩振荡器（STO）。 STO从空气轴承表面凹陷。

公开(公告)号：US20160005428A1

公开(公告)日：2016-01-07

申请号：US14850984

申请日：2015-09-11

Applicant: HGST Netherlands B.V.

Inventor： Jun AOYAMA ,  Masahiko HATATANI ,  Hiroyuki KATADA ,  Masato SHIIMOTO

IPC: G11B5/39 ,  G11B5/60

CPC classification number: G11B5/3912 ,  G11B5/11 ,  G11B5/398

Abstract: Embodiments of the present invention generally include magnetoresistive heads, such as read heads, having a sensor structure and side shields disposed adjacent to the sensor structure. The distance between the side shields and the sensor structure increase in a direction from an ABS in the off-track direction. The magnetoresistive heads may include tapered surfaces on the side shields or sensor structure, or may include stepped surfaces on the side shields or sensor structure.

公开(公告)号：US20150228295A1

公开(公告)日：2015-08-13

申请号：US14179358

申请日：2014-02-12

Applicant: HGST Netherlands B.V.

Inventor： Masato SHIIMOTO ,  Masukaza IGARASHI ,  Keiichi NAGASAKA ,  Yo SATO

IPC: G11B5/35

CPC classification number: G11B5/1278 ,  G11B5/235 ,  G11B5/3146 ,  G11B2005/0024

Abstract: The embodiments disclosed generally relate to an STO structure for a magnetic head. The STO structure has an FGL having a greater thickness than the SPL. The SPL may have multiple layers. In one embodiment, a MAMR head comprises a main pole; a trailing shield; and an STO coupled between the main pole and the trailing shield. The STO includes: a first magnetic layer having a first thickness; a non-magnetic spacer layer coupled to the first magnetic layer; and a second magnetic layer having a second thickness and coupled to the non-magnetic spacer layer, wherein the first thickness is greater than the second thickness, wherein a current is charged from the first magnetic layer to the second magnetic layer, and wherein a vertical magnetic anisotropy field of the second magnetic film is less than 0 kOe.

Abstract translation: 所公开的实施例通常涉及用于磁头的STO结构。 STO结构具有比SPL更大的厚度的FGL。 SPL可能有多个层。 在一个实施例中，MAMR头包括主极; 后盾 以及耦合在主极和后盾之间的STO。 STO包括：具有第一厚度的第一磁性层; 耦合到所述第一磁性层的非磁性间隔层; 以及具有第二厚度并耦合到非磁性间隔层的第二磁性层，其中所述第一厚度大于所述第二厚度，其中电流从所述第一磁性层充电到所述第二磁性层，并且其中垂直 第二磁性膜的磁各向异性场小于0kOe。

公开(公告)号：US20160086623A1

公开(公告)日：2016-03-24

申请号：US14494559

申请日：2014-09-23

Applicant: HGST Netherlands B.V.

Inventor： Keiichi NAGASAKA ,  Yo SATO ,  Masato SHIIMOTO ,  Masashige SATO ,  Masukazu IGARASHI ,  Susumu OKAMURA

IPC: G11B5/31

CPC classification number: G11B5/3146 ,  G11B5/235 ,  G11B2005/0024

Abstract: Embodiments disclosed herein generally relate to a MAMR head. The MAMR head includes an STO. The STO has a first magnetic layer, a second magnetic layer and an interlayer disposed between the first and second magnetic layers. One of the first and second magnetic layers is made of a negative polarization material while the other magnetic layer is made of a positive polarization material. As a result, the magnetizations in the first and second magnetic layers are in the same direction when in oscillation, which suppresses the partial cancellation of the magnetizations in the first and second magnetic layers and strengthens the AC magnetic field.

Abstract translation: 本文公开的实施例通常涉及MAMR头。 MAMR头包括STO。 STO具有第一磁性层，第二磁性层和设置在第一和第二磁性层之间的中间层。 第一和第二磁性层中的一个由负极化材料制成，而另一个磁性层由正极化材料制成。 结果，在振荡时，第一和第二磁性层中的磁化处于相同的方向，这抑制了第一和第二磁性层中的磁化的部分消除，并且增强了交流磁场。

公开(公告)号：US20150348574A1

公开(公告)日：2015-12-03

申请号：US14290768

申请日：2014-05-29

Applicant: HGST Netherlands B.V.

Inventor： Masukazu IGARASHI ,  Masato MATSUBARA ,  Keiichi NAGASAKA ,  Yo SATO ,  Masato SHIIMOTO ,  Masashige SATO

IPC: G11B5/35

CPC classification number: G11B5/00 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/235 ,  G11B5/3146 ,  G11B2005/0024

Abstract: The present disclosure generally relates to a high-frequency oscillator for use in a recording device having a microwave-assisted magnetic recording head. The microwave-assisted magnetic recording head achieves a large assist effect by using an extended spin torque oscillator disposed between a main magnetic pole and a pole opposite the main magnetic pole. The spin torque oscillator obtains a strong high-frequency magnetic field and comprises a first non-magnetic spin scatterer, a reference layer, a first non-magnetic spin transfer layer, a first magnetic field generating layer, a second non-magnetic spin transfer layer, a second magnetic field generating layer, and a second non-magnetic spin scatterer. The spin torque oscillator has a drive current flowing though in the direction from the first magnetic field generating layer to the reference layer.

Abstract translation: 本公开总体上涉及用于具有微波辅助磁记录头的记录装置中的高频振荡器。 微波辅助磁记录头通过使用设置在主磁极和与主磁极相对的极之间的扩展旋转扭矩振荡器来实现大的辅助效果。 旋转扭矩振荡器获得强的高频磁场，并且包括第一非磁性旋转散射体，参考层，第一非磁性自旋转移层，第一磁场产生层，第二非磁性自旋转移层 ，第二磁场产生层和第二非磁性旋转散射体。 自旋转矩振荡器具有沿着从第一磁场产生层到参考层的方向流动的驱动电流。

公开(公告)号：US20150248903A1

公开(公告)日：2015-09-03

申请号：US14194488

申请日：2014-02-28

Applicant: HGST Netherlands B.V.

Inventor： Jun AOYAMA ,  Masato SHIIMOTO ,  Hiroyuki KATADA ,  Kenichi MEGURO ,  Nobuo YOSHIDA

IPC: G11B5/39

CPC classification number: G11B5/3912 ,  G11B5/398

Abstract: The embodiments disclosed generally relate to a read head sensor in a magnetic recording head. The read head sensor comprises side shields in addition to the upper and lower shields. The upper shield sensor is a multilayer structure with antiferromagnetic coupling. The side shield is a multilayer structure whereby a lower magnetic layer is separated from an upper magnetic layer. The upper magnetic layer is ferromagnetically coupled to a bottom layer of the upper shield. The bias direction of the read head sensor is antiparallel to the bottom layer of the upper shield.

Abstract translation: 所公开的实施例一般涉及磁记录头中的读头传感器。 读取头传感器除了上屏蔽和下屏蔽之外还包括侧屏蔽。 上屏蔽传感器是具有反铁磁耦合的多层结构。 侧面屏蔽是多层结构，其中下部磁性层与上部磁性层分离。 上磁性层被铁磁耦合到上屏蔽层的底层。 读头传感器的偏置方向与上屏蔽层的底层反平行。

公开(公告)号：US20150103431A1

公开(公告)日：2015-04-16

申请号：US14052370

申请日：2013-10-11

Applicant: HGST Netherlands B.V.

Inventor： Masukaza IGARASHI ,  Keiichi NAGASAKA ,  Masato SHIIMOTO

IPC: G11B33/14 ,  G11B5/31

CPC classification number: G11B5/3116 ,  G11B5/235 ,  G11B5/3146 ,  G11B2005/0024

Abstract: Embodiments described herein generally relate to a magnetic recording device for recording/reproducing data using the magnetization state of a recording medium. More specifically, embodiments described herein provide an STO structure having an SPL and an FGL with an anti-ferromagnetic coupling interlayer disposed between the SPL and FGL. The anti-ferromagnetic coupling interlayer may enable the STO structure to obtain a high assist effect even when operated with a low conducting current.

Abstract translation: 本文描述的实施例通常涉及使用记录介质的磁化状态记录/再现数据的磁记录装置。 更具体地，本文所述的实施例提供了具有SPL和FGL的STO结构，其具有设置在SPL和FGL之间的反铁磁耦合夹层。 反铁磁耦合中间层可以使得STO结构即使在以低导通电流操作的情况下也能获得高的辅助效果。

公开(公告)号：US20160148627A1

公开(公告)日：2016-05-26

申请号：US14548853

申请日：2014-11-20

Applicant: HGST Netherlands B.V.

Inventor： Keiichi NAGASAKA ,  Yo SATO ,  Masashige SATO ,  Susumu OKAMURA ,  Masato SHIIMOTO ,  Masukazu IGARASHI

IPC: G11B5/35 ,  H03B15/00 ,  G11B5/17

CPC classification number: G11B5/35 ,  G11B5/314 ,  G11B5/607 ,  G11B2005/0024

Abstract: Embodiments disclosed herein generally relate to a magnetic disk device employing a MAMR head. The MAMR head includes an STO. The STO comprises an underlayer, an SPL, an interlayer, an FGL, and a capping layer. The SPL is comprised of a high perpendicular magnetic anisotropy material. The SPL has a large effective perpendicular magnetic anisotropy field, and the SPL has a lower magnetic moment than the FGL. An applied current is adapted to flow in a direction from the FGL to the SPL resulting in the magnetization direction of the SPL being almost perpendicular to the FGL and anti-parallel to a head-gap magnetic field due to a relation between a first spin torque directed from the SPL to the FGL and a second spin torque directed from the FGL to the SPL.

Abstract translation: 本文公开的实施例通常涉及采用MAMR头的磁盘装置。 MAMR头包括STO。 STO包括底层，SPL，中间层，FGL和覆盖层。 SPL由高垂直磁各向异性材料组成。 SPL具有大的有效垂直磁各向异性场，SPL具有比FGL低的磁矩。 施加的电流适于沿着从FGL到SPL的方向流动，导致SPL的磁化方向几乎垂直于FGL，并且由于第一自旋转矩之间的关系而与头间隙磁场反平行 从SPL引导到FGL，以及从FGL指向SPL的第二自旋扭矩。