公开(公告)号：US10276744B2

公开(公告)日：2019-04-30

申请号：US15719609

申请日：2017-09-29

申请人： HC SEMITEK (SUZHOU) CO., LTD.

发明人： Xianghua Lu ,  Lijun Xia ,  Jiahui Hu ,  Shizhen Wei

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A light-emitting diode epitaxial wafer, including: a substrate; and a buffer layer, an undoped GaN layer, an n-type GaN contact layer, a multi-quantum well layer, and a p-type GaN contact layer, which are sequentially laminated on the substrate in that order. The multi-quantum well layer includes GaN barrier layers and at least one InxGa1-xN well layer, where 0