公开(公告)号：US20220085095A1

公开(公告)日：2022-03-17

申请号：US17310780

申请日：2020-02-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryosuke OKUMURA ,  Yuki YOSHIDA ,  Yoshinori TSUKADA

IPC: H01L27/146 ,  H01L31/18

Abstract: A method for manufacturing a light detection device includes a first process of preparing a semiconductor wafer having a first main surface and a second main surface, a second process of providing a first support substrate on the first main surface, a third process of cutting the semiconductor wafer and the first support substrate in a state where the first support substrate is provided on the first main surface, and obtaining a light receiving element in a state where a support member is provided on a first surface, a fourth process of, by using a plurality of connection members arranged between a second surface and a mounting surface of a circuit structure, electrically and physically connecting the light receiving element and the circuit structure in a state where the support member is provided on the first surface, and a fifth process of removing the support member from the first surface.

公开(公告)号：US20230327039A1

公开(公告)日：2023-10-12

申请号：US18017866

申请日：2021-07-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshinori TSUKADA ,  Kohei KASAMORI ,  Masaki HIROSE ,  Yoshihisa WARASHINA

IPC: H01L31/107 ,  H01L31/0216

CPC classification number: H01L31/107 ,  H01L31/02164

Abstract: A photodetection device includes a photodetection element and a package. The photodetection element includes a semiconductor substrate and a light absorption film. The light absorption film is provided on a region of at least a part of a region around a photodetection region on a principal surface of the semiconductor substrate. The light absorption film has a multi-layer structure including a light absorption layer, a resonance layer, and a reflection layer. At a wavelength of detection target light, a light transmittance inside the resonance layer is larger than a light transmittance inside the light absorption layer, and a light reflectance on a surface of the reflection layer is larger than a light reflectance on a surface of the resonance layer.

公开(公告)号：US20230187462A1

公开(公告)日：2023-06-15

申请号：US17925409

申请日：2021-05-17

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshinori TSUKADA ,  Kohei KASAMORI ,  Masaki HIROSE ,  Yoshihisa WARASHINA

IPC: H01L27/146

CPC classification number: H01L27/14629 ,  H01L27/14649

Abstract: A photodetection element includes a semiconductor substrate having a principal surface on which detection target light is incident and a rear surface, and including one or a plurality of photodetection regions on the principal surface side, and a light absorption film provided on the rear surface. The light absorption film includes a reflection layer being a metal layer, a resonance layer provided between the reflection layer and the substrate, and a light absorption layer provided between the resonance layer and the substrate. In at least one of a wavelength of the detection target light and a wavelength of spontaneous light, a light transmittance inside the resonance layer is larger than a light transmittance inside the light absorption layer, and a light reflectance on a surface of the reflection layer is larger than a light reflectance on a surface of the resonance layer.