公开(公告)号：US11927626B2

公开(公告)日：2024-03-12

申请号：US17641504

申请日：2020-08-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toshiki Yamada

IPC: G01R31/311

CPC classification number: G01R31/311

Abstract: In an inspection device, the reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The removal processing section performs, based on the reference signal, processing for removing a noise component, which is due to the output of the external power supply device from the current signal output from the semiconductor sample and outputs a processing signal. The electrical characteristic measurement section measures the electrical characteristics of the semiconductor sample based on the processing signal. The processing signal is subjected to the removal processing performed based on the reference signal from the reference signal output section for which the value of the gain has been set by the gain setting section.

公开(公告)号：US11243113B2

公开(公告)日：2022-02-08

申请号：US16981524

申请日：2019-03-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toshiki Yamada

IPC: G01J1/16 ,  H01L31/107

Abstract: An optical difference detector includes a first APD and a second APD, a first voltage application unit that applies a first bias voltage to the first APD and a second voltage application unit that applies a second bias voltage to the second APD, a differential amplifier that is connected in parallel to the first APD and the second APD and amplifies a difference between a first signal current output from the first APD and a second signal current output from the second APD, and a feedback control unit that controls the second bias voltage so that a low frequency component of a first monitoring current in the first APD and a low frequency component of a second monitoring current in the second APD are equal.

公开(公告)号：US11733091B2

公开(公告)日：2023-08-22

申请号：US17539702

申请日：2021-12-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Toshiki Yamada

IPC: G01J1/16 ,  H01L31/107

CPC classification number: G01J1/1626 ,  H01L31/107

Abstract: An optical difference detector includes a first APD and a second APD, a first voltage application unit that applies a first bias voltage to the first APD and a second voltage application unit that applies a second bias voltage to the second APD, a differential amplifier that is connected in parallel to the first APD and the second APD and amplifies a difference between a first signal current output from the first APD and a second signal current output from the second APD, and a feedback control unit that controls the second bias voltage so that a low frequency component of a first monitoring current in the first APD and a low frequency component of a second monitoring current in the second APD are equal.

公开(公告)号：US11573251B2

公开(公告)日：2023-02-07

申请号：US17271042

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka Iwaki ,  Yuji Nakajima ,  Toshiki Yamada

IPC: G01R19/00 ,  G01R31/26 ,  G01R31/265 ,  G01R31/311

Abstract: An inspection device includes a reference signal output section, a noise removal section, and an electrical characteristic measurement section. The reference signal output section is connected to an external power supply device in electrical parallel with a semiconductor sample, and outputs a reference signal according to the output of the external power supply device. The noise removal section outputs a noise removal signal obtained by removing a noise component of the output of the external power supply device from the current signal output from the semiconductor sample based on the reference signal. The electrical characteristic measurement section measures the electrical characteristic of the semiconductor sample based on the noise removal signal. The inspection device measures the electrical characteristic of the semiconductor sample to which a voltage is being applied by the external power supply device and which is being irradiated and scanned with light. The inspection device outputs a defective portion of the semiconductor sample based on the electrical characteristic.