公开(公告)号：US20220394204A1

公开(公告)日：2022-12-08

申请号：US17767141

申请日：2020-09-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryo TAKIGUCHI ,  Shinya ITO ,  Makoto IWASHITA ,  Mitsuaki KAGEYAMA

IPC: H04N5/378 ,  G01N21/64

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.