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公开(公告)号:US20210403320A1
公开(公告)日:2021-12-30
申请号:US17288642
申请日:2019-10-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Nao INOUE , Jo ITO , Go TANAKA , Atsuya IIMA , Daiki SUZUKI , Katsumi SHIBAYAMA
Abstract: A method of manufacturing a semiconductor substrate according to an embodiment includes a first step of forming a groove having a bottom surface and a side surface on which scallops are formed by performing a process including isotropic etching on a main surface of a substrate, a second step of performing at least one of a hydrophilic treatment on the side surface of the groove and a degassing treatment on the groove, and a third step of removing the scallops formed on the side surface of the groove and planarizing the side surface by performing anisotropic wet etching in a state where the bottom surface of the recess is present.
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公开(公告)号:US20160202037A1
公开(公告)日:2016-07-14
申请号:US14911583
申请日:2014-07-31
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Tomofumi SUZUKI , Yoshihisa WARASHINA , Kohei KASAMORI , Tatsuya SUGIMOTO , Jo ITO
CPC classification number: G01B9/02051 , G01J3/0256 , G01J3/4532 , G01J3/4535
Abstract: A method of manufacturing an optical interferometer includes a first step of forming a first semiconductor portion for a beam splitter and a second semiconductor portion for a movable mirror on a main surface of a support substrate and a first insulating layer formed on the main surface, a second step of disposing a first wall portion between a first side surface of the first semiconductor portion and a second side surface in the second semiconductor portion, and a third step of forming a mirror surface in the second semiconductor portion by forming a first metal film on the second side surface using a shadow mask. In the third step, the first side surface is masked by the mask portion and the first wall portion and the first metal film is formed in a state in which the second side portion is exposed from an opening portion.
Abstract translation: 一种制造光干涉仪的方法包括:形成用于分束器的第一半导体部分和在支撑基板的主表面上形成的可移动反射镜的第二半导体部分和形成在主表面上的第一绝缘层的第一步骤, 在第一半导体部分的第一侧表面和第二半导体部分中的第二侧表面之间布置第一壁部分的第二步骤,以及通过在第二半导体部分中形成第一金属膜来形成第二半导体部分中的镜面的第三步骤 第二侧面使用荫罩。 在第三步骤中,第一侧表面被掩模部分掩蔽,并且第一壁部分和第一金属膜形成在第二侧部分从开口部分露出的状态。
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