公开(公告)号：US20190080906A1

公开(公告)日：2019-03-14

申请号：US15701192

申请日：2017-09-11

Applicant: General Electric Company

Inventor： Stacey Joy Kennerly ,  Victor Torres ,  David Lilienfeld ,  Robert Dwayne Gossman ,  Gregory Keith Dudoff

IPC: H01L21/02 ,  C23C14/16 ,  H01L21/04 ,  H01L23/532 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/02697 ,  C23C14/165 ,  H01L21/049 ,  H01L21/28568 ,  H01L21/76877 ,  H01L23/53223

Abstract: A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

公开(公告)号：US10354871B2

公开(公告)日：2019-07-16

申请号：US15701192

申请日：2017-09-11

Applicant: General Electric Company

Inventor： Stacey Joy Kennerly ,  Victor Torres ,  David Lilienfeld ,  Robert Dwayne Gossman ,  Gregory Keith Dudoff

IPC: H01L21/02 ,  H01L21/04 ,  H01L21/768 ,  H01L23/532 ,  C23C14/16 ,  H01L21/285

Abstract: A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.