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公开(公告)号：US20140170533A1
公开(公告)日：2014-06-19
申请号：US13719621
申请日：2012-12-19
发明人： Lei Sun , Pawitter S. Mangat , Vibhu Jindal , Obert R. Wood, II
IPC分类号： G03F1/22
CPC分类号： G03F1/22
摘要： An alternating phase shift mask for use with extreme ultraviolet lithography is provided. A substrate with a planar top surface is used as a base for the phase shift mask. A spacer layer serves as a Fabry-Perot cavity for controlling the phase shift difference between two adjacent surfaces of the phase shift mask and controlling the reflectivity from the top of the second multilayer. A protective layer serves as an etch stop layer to protect a first multilayer region in certain regions of the phase shift mask, while other regions of the phase shift mask utilize a second multilayer region for achieving a phase shift difference. Some embodiments may further include an absorber layer region to provide areas with no reflectance, in addition to the areas of alternating phase shift. Embodiments of the present invention may be used to monitor the focus and aberration of a lithography tool.
摘要翻译： 提供了一种用于极紫外光刻的交替相移掩模。 具有平面顶表面的基板用作相移掩模的基底。 间隔层用作法布里 - 珀罗腔，用于控制相移掩模的两个相邻表面之间的相移差，并控制来自第二多层的顶部的反射率。 保护层用作蚀刻停止层以保护相移掩模的某些区域中的第一多层区域，而相移掩模的其它区域利用第二多层区域来实现相移差。 除了交替相移的区域之外，一些实施例还可以包括提供没有反射率的区域的吸收层区域。 本发明的实施例可以用于监测光刻工具的焦点和像差。
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公开(公告)号：US08865376B2
公开(公告)日：2014-10-21
申请号：US13790288
申请日：2013-03-08
申请人： Sematech, Inc. , Intel Corporation
CPC分类号： G03F1/22
摘要： Methods are provided for fabricating a process structure, such as a mask or mask blank. The methods include, for instance: providing a silicon substrate; forming a multi-layer, extreme ultra-violet lithography (EUVL) structure over the silicon substrate; subsequent to forming the multi-layer EUVL structure over the crystalline substrate, reducing a thickness of the silicon substrate; and attaching a low-thermal-expansion material (LTEM) substrate to one of the multi-layer EUVL structure, or the reduced silicon substrate. In one implementation, the silicon substrate is a silicon wafer with a substantially defect-free surface upon which the multi-layer EUVL structure is formed. The multi-layer EUVL structure may include multiple bi-layers of a first material and a second material, as well as a capping layer, and optionally, an absorber layer, where the absorber layer is patternable to facilitating forming a EUVL mask from the process structure.
摘要翻译： 提供了用于制造诸如掩模或掩模坯料的工艺结构的方法。 所述方法包括例如：提供硅衬底; 在硅衬底上形成多层，极紫外光刻（EUVL）结构; 随后在晶体衬底上形成多层EUVL结构，减小硅衬底的厚度; 以及将低热膨胀材料（LTEM）衬底附接到多层EUVL结构之一或还原硅衬底。 在一个实施方案中，硅衬底是具有基本无缺陷表面的硅晶片，在其上形成多层EUVL结构。 多层EUVL结构可以包括第一材料和第二材料的多个双层，以及覆盖层和任选的吸收层，其中吸收层可图案化以便于从该过程形成EUVL掩模 结构体。
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公开(公告)号：US20140242500A1
公开(公告)日：2014-08-28
申请号：US14273419
申请日：2014-05-08
发明人： Vibhu Jindal , Junichi Kageyama
摘要： A process for cleaning and restoring deposition shield surfaces which results in a cleaned shield having a surface roughness of between about 200 microinches and about 500 microinches and a particle surface density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles less than about 1 micron in size and method for use thereof is disclosed.
摘要翻译： 一种用于清洁和恢复沉积屏蔽表面的方法，其导致具有约200微英寸至约500微英寸之间的表面粗糙度和小于约0.1微米/ mm 2的颗粒的颗粒表面密度在约1微米至约5微米之间的清洁屏蔽 公开了尺寸微米和尺寸小于约1微米的颗粒及其使用方法。
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公开(公告)号：US20140242501A1
公开(公告)日：2014-08-28
申请号：US14273426
申请日：2014-05-08
发明人： Vibhu Jindal , Junichi Kageyama
摘要： A deposition chamber shield having a stainless steel coating of from about 100 microns to about 250 microns thick wherein the coated shield has a surface roughness of between about 300 microinches and about 800 microinches and a surface particle density of less than about 0.1 particles/mm2 of particles between about 1 micron and about 5 microns in size and no particles below about 1 micron in size, and process for production thereof is disclosed.
摘要翻译： 一种沉积室屏蔽，其具有约100微米至约250微米厚的不锈钢涂层，其中涂覆的屏蔽物具有约300微英寸至约800微英寸的表面粗糙度和小于约0.1微米/ mm 2的表面颗粒密度 公开了尺寸为约1微米至约5微米且尺寸小于约1微米的颗粒的颗粒及其生产方法。
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