Lateral MOSCAP phase adjuster
    1.
    发明授权

    公开(公告)号:US10642077B1

    公开(公告)日:2020-05-05

    申请号:US16196947

    申请日:2018-11-20

    Abstract: A MOSCAP phase adjuster includes two conductive regions with a thin insulating region therebetween, where charge is accumulated or depleted. In conventional MOSCAP modulators, the conductive and insulating regions are superposed layers, extending horizontally parallel to the substrate, which limits waveguide design and mode confinement, resulting in reduced phase shift performance. An improved MOSCAP phase adjuster and method of fabricating a MOSCAP phase adjuster includes depositing the material for the second conductive region beside and over top of the first conductive region after oxidation, and selectively etching the material to form the second conductive region.

    LATERAL MOSCAP PHASE ADJUSTER
    2.
    发明申请

    公开(公告)号:US20200233242A1

    公开(公告)日:2020-07-23

    申请号:US16838112

    申请日:2020-04-02

    Abstract: A MOSCAP phase adjuster includes two conductive regions with a thin insulating region therebetween, where charge is accumulated or depleted. In conventional MOSCAP modulators, the conductive and insulating regions are superposed layers, extending horizontally parallel to the substrate, which limits waveguide design and mode confinement, resulting in reduced phase shift performance. An improved MOSCAP phase adjuster and method of fabricating a MOSCAP phase adjuster includes depositing the material for the second conductive region beside and over top of the first conductive region after oxidation, and selectively etching the material to form the second conductive region.

    LATERAL MOSCAP PHASE ADJUSTER
    3.
    发明申请

    公开(公告)号:US20200159048A1

    公开(公告)日:2020-05-21

    申请号:US16196947

    申请日:2018-11-20

    Abstract: A MOSCAP phase adjuster includes two conductive regions with a thin insulating region therebetween, where charge is accumulated or depleted. In conventional MOSCAP modulators, the conductive and insulating regions are superposed layers, extending horizontally parallel to the substrate, which limits waveguide design and mode confinement, resulting in reduced phase shift performance. An improved MOSCAP phase adjuster and method of fabricating a MOSCAP phase adjuster includes depositing the material for the second conductive region beside and over top of the first conductive region after oxidation, and selectively etching the material to form the second conductive region.

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