Patent search ap:("Electronics AND Telecommunications Research Institute") AND inv:"SangHwa YOO" Page 1

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发明申请
HIGH DENSITY CAPACITOR AND MANUFACTURING METHOD THEREFOR 有权

公开(公告)号：US20250107216A1

公开(公告)日：2025-03-27

申请号：US18893820

申请日：2024-09-23

Applicant: Electronics and Telecommunications Research Institute

Inventor： SangHwa YOO , Heuk PARK , Joon Ki LEE

IPC: H01L27/06 , H01L29/66 , H01L29/94

Abstract: A high-density capacitor and a method for manufacturing the same are disclosed. The high-density capacitor includes a metal-oxide-semiconductor (MOS) capacitor having a silicon layer with a dopant concentration of at least 1×1020 cm-3; a first dielectric layer formed on above the silicon layer, and a first metal layer formed above the first dielectric layer.

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