公开(公告)号：US10825932B2

公开(公告)日：2020-11-03

申请号：US16374095

申请日：2019-04-03

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jae-Eun Pi ,  Seung Youl Kang ,  Jaehyun Moon ,  Seongdeok Ahn ,  Jongchan Lee ,  Chul Woong Joo ,  Chi-Sun Hwang

IPC: H01L29/786 ,  H01L29/66

Abstract: Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.