公开(公告)号：US09298290B2

公开(公告)日：2016-03-29

申请号：US13717769

申请日：2012-12-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jaeheon Shin ,  Kyung Hyun Kim ,  Woo-Seok Cheong ,  Rae-Man Park

IPC: G06F3/041 ,  H01L21/00 ,  G06F3/044

CPC classification number: G06F3/041 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04111 ,  H01L21/00 ,  Y10T29/49105

Abstract: Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.

Abstract translation: 提供了具有改进的透射率的触摸屏面板及其制造方法。 该方法可以包括准备包括单元区域和设置在单元区域周围的互连区域的衬底，在衬底上依次形成第一缓冲层和第二缓冲层，第二缓冲层的折射率小于第一缓冲层的折射率 缓冲层，并在第二缓冲层上形成透明电极。 第二缓冲层由SiOC材料形成。

公开(公告)号：US20140015771A1

公开(公告)日：2014-01-16

申请号：US13717769

申请日：2012-12-18

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jaeheon Shin ,  Kyung Hyun Kim ,  Woo-Seok Cheong ,  Rae-Man Park

IPC: G06F3/041 ,  H01L21/00

CPC classification number: G06F3/041 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04111 ,  H01L21/00 ,  Y10T29/49105

Abstract: Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material.

Abstract translation: 提供了具有改进的透射率的触摸屏面板及其制造方法。 该方法可以包括制备包括单元区域和设置在单元区域周围的互连区域的衬底，在衬底上依次形成第一缓冲层和第二缓冲层，第二缓冲层的折射率小于第一缓冲层的折射率 缓冲层，并在第二缓冲层上形成透明电极。 第二缓冲层由SiOC材料形成。