公开(公告)号：US20240116769A1

公开(公告)日：2024-04-11

申请号：US18378618

申请日：2023-10-10

Applicant: ENTEGRIS, INC.

Inventor： Scott A. Laneman ,  David M. Ermert ,  Thomas M. Cameron

IPC: C01F7/48

CPC classification number: C01F7/48

Abstract: Methods of the present disclosure include the development of a low temperature, solvent-assistant synthesis of aluminates, such as lithium tetraiodoaluminate (LiAlI4). The present disclosure includes methods of preparing a compound of formula (I): [M+q][Al(X)3I]q.

公开(公告)号：US20240101582A1

公开(公告)日：2024-03-28

申请号：US18239661

申请日：2023-08-29

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood ,  Thomas M. Cameron

IPC: C07F7/00

CPC classification number: C07F7/00

Abstract: The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.

公开(公告)号：US20230392702A1

公开(公告)日：2023-12-07

申请号：US18204736

申请日：2023-06-01

Applicant: ENTEGRIS, INC.

Inventor： Christopher Brown ,  Martha Miller ,  Thomas M. Cameron

IPC: F16K17/38 ,  B65D51/16

CPC classification number: F16K17/383 ,  B65D51/1644

Abstract: Described are pressure relief devices and associated equipment, e.g., containers, the pressure relief device being adapted to provide pressure relief to a pressurized fluid within a container when a fusible metal component of the relieve device reaches a melting temperature.

公开(公告)号：US11203604B2

公开(公告)日：2021-12-21

申请号：US16706347

申请日：2019-12-06

Applicant: ENTEGRIS, INC.

Inventor： David Kuiper ,  Manish Khandelwal ,  Thomas M. Cameron ,  Thomas H. Baum ,  John Cleary

IPC: C07F7/08

Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.

公开(公告)号：US20240317781A1

公开(公告)日：2024-09-26

申请号：US18612002

申请日：2024-03-21

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron ,  Claudia Fafard

IPC: C07F7/22

CPC classification number: C07F7/2208

Abstract: A method of synthesis of a mono-substituted tin compound comprises contacting a stannous halide with a metalated reactant to form a stannylene compound; contacting the stannylene compound with a halide compound to form a stannic compound; and contacting the stannic compound with a reactant to form a mono-substituted tin compound via ligand exchange. A composition comprising the mono-substituted tin compound is also provided, among other compositions and methods.

公开(公告)号：US11685752B2

公开(公告)日：2023-06-27

申请号：US17586834

申请日：2022-01-28

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas H. Baum ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2296

Abstract: Provided is a facile methodology for preparing certain organotin compounds having alkyl and alkylamino or alkyl and alkoxy substituents. The process provides the organotin compounds in a highly pure form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

公开(公告)号：US12221691B2

公开(公告)日：2025-02-11

申请号：US17992166

申请日：2022-11-22

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  David Kuiper ,  Thomas M. Cameron

IPC: C23C16/18 ,  C07F7/22 ,  C23C16/455

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

公开(公告)号：US20240116774A1

公开(公告)日：2024-04-11

申请号：US18376476

申请日：2023-10-04

Applicant: ENTEGRIS, INC.

Inventor： Loren Press ,  Benjamin Garrett ,  Michael Watson ,  Scott L. Battle ,  Thomas M. Cameron ,  Bryan Hendrix

IPC: C01G41/04

CPC classification number: C01G41/04

Abstract: A precursor comprises a tungsten precursor and a carbon-containing material. The precursor comprises less than 0.02% by weight of the carbon-containing material based on a total weight of the precursor. A method for purifying a tungsten precursor may comprise at least one of the following steps: obtaining a source vessel containing a tungsten precursor and a carbon-containing material; separating the tungsten precursor from at least a first portion of the carbon-containing material; recovering a precursor in a collection vessel; or any combination thereof.

公开(公告)号：US20240092810A1

公开(公告)日：2024-03-21

申请号：US18240254

申请日：2023-08-30

Applicant: ENTEGRIS, INC.

Inventor： Claudia Fafard ,  David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2224

Abstract: Mono-substituted tin silanolate compounds and related methods are provided. A method comprises contacting a mono-substituted tin (IV) compound with a silanolate reactant to form a mono-substituted tin silanolate compound. A composition comprises a mono-substituted tin silanolate compound.

公开(公告)号：US20240002412A1

公开(公告)日：2024-01-04

申请号：US18216395

申请日：2023-06-29

Applicant: ENTEGRIS, INC.

Inventor： David M. Ermert ,  Thomas M. Cameron

IPC: C07F7/22

CPC classification number: C07F7/2284 ,  C07F7/2224

Abstract: The present disclosure includes the preparation of mixed-ligand compounds, such as tin(II) cyclopentadienylide complexes. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for extreme ultraviolet (EUV) lithography. The compounds of the present disclosure can also be used as plasma chemical vapor deposition (CVD) precursors for EUV lithography.