公开(公告)号：US20150055417A1

公开(公告)日：2015-02-26

申请号：US14336699

申请日：2014-07-21

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon-Seok KIM ,  Sang-Kyung YOO ,  Sanghan LEE

IPC: G11C16/10

CPC classification number: G11C16/10 ,  G06F7/58 ,  G06F7/588 ,  G06F21/44 ,  G09C1/00 ,  G11C16/0408 ,  H04L9/3278

Abstract: A method and apparatus for controlling the operation of flash memory are provided. The apparatus for controlling the operation of flash memory includes a control unit and a voltage adjustment unit. The control unit outputs a control signal adapted to change one or more of the program, erase and read voltage conditions for the flash memory to the voltage adjustment unit in response to the input of a PUF mode selection signal. The voltage adjustment unit changes the one or more of the program, erase and read voltage conditions for the flash memory in response to the input of the control signal.

Abstract translation: 提供了一种用于控制闪速存储器的操作的方法和装置。 用于控制闪速存储器的操作的装置包括控制单元和电压调节单元。 控制单元响应于PUF模式选择信号的输入，输出适于将闪存的编程，擦除和读取电压条件中的一个或多个改变到电压调节单元的控制信号。 电压调整单元响应于控制信号的输入改变闪速存储器的编程，擦除和读取电压条件中的一个或多个。

公开(公告)号：US20220374302A1

公开(公告)日：2022-11-24

申请号：US17458138

申请日：2021-08-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon-Seok KIM ,  Bong-Soo LEE ,  Jun-Ki KANG ,  Ki-Hong KIM

IPC: G06F11/07 ,  G06F3/06 ,  H04L9/30

Abstract: Disclosed herein are a method for generating Gaussian error data using flash memory and an apparatus using the method. The method includes receiving a request to generate Gaussian error data and delivering an operation command to flash memory; generating Gaussian error noise based on a threshold voltage that is generated when the flash memory performs the operation command; and generating Gaussian error data so as to correspond to the Gaussian error noise and providing the same.

公开(公告)号：US20220366975A1

公开(公告)日：2022-11-17

申请号：US17458129

申请日：2021-08-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon-Seok KIM ,  Bong-Soo LEE ,  Jun-Ki KANG ,  Ki-Hong KIM

IPC: G11C13/00

Abstract: Disclosed herein are a Gaussian sampling apparatus and method based on resistive RAM. The Gaussian sampling apparatus based on resistive RAM includes Resistive RAM (RRAM) in which a resistive switching layer is disposed between an upper electrode and a lower electrode, and a sampling controller, wherein the sampling controller is configured to perform an operation corresponding to an erase command of applying a reset voltage to the RRAM when a Gaussian error request is received from an outside of the Gaussian sampling apparatus, perform an operation corresponding to a program command of applying a set voltage to the RRAM after the operation corresponding to the erase command has been completed, perform an operation of reading resistance data from the RRAM, and provide a response to the outside of the Gaussian sampling apparatus by transmitting the resistance data of the RRAM as Gaussian error data.

公开(公告)号：US20150347216A1

公开(公告)日：2015-12-03

申请号：US14714310

申请日：2015-05-17

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Moon-Seok KIM ,  Sang-Kyung YOO ,  Seok RYU ,  Bong Soo LEE ,  Rae LEE ,  Junki KANG ,  Sanghan LEE

IPC: G06F11/07

CPC classification number: G06F11/079 ,  G06F11/0745 ,  G06F11/0751 ,  G11C11/41 ,  G11C29/08 ,  G11C29/44 ,  G11C29/52 ,  G11C29/56008

Abstract: An apparatus and method that prevent a bit error in a static random access memory (SRAM)-based Physically Unclonable function (PUF). The method for preventing an error in a PUF includes selecting any value, from a physically unclonable function based on a volatile memory device, as an input value, and checking a response corresponding to the selected input value, classifying cells having a plurality of bits corresponding to the response depending on frequency of error occurrence, calculating a number of white cells, in which an error does not occur, from classified results, and determining whether the number of white cells is greater than a preset threshold number of white cells, and selecting an input value of the physically unclonable function based on results of determination.

Abstract translation: 一种防止基于静态随机存取存储器（SRAM）的物理不可克隆功能（PUF）中的位错误的装置和方法。 用于防止PUF中的错误的方法包括从基于易失性存储器件的物理不可克隆功能中选择任何值作为输入值，并且检查与所选择的输入值相对应的响应，对具有多个比特的小区进行分类 根据错误发生的频率到响应，从分类结果计算出不发生错误的白细胞的数目，以及确定白细胞数是否大于预设的白细胞数阈值，并选择 基于确定结果的物理不可克隆功能的输入值。