公开(公告)号：US20250072019A1

公开(公告)日：2025-02-27

申请号：US18770484

申请日：2024-07-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jun Hwan SHIN ,  Young Ho Kim ,  Eui Su Lee ,  Jin Chul Cho ,  Soo Cheol Kang ,  Dong Woo Park ,  II Min Lee

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/66

Abstract: Disclosed herein are a Schottky barrier diode (SBD) and a method of manufacturing the same. The SBD includes a substrate, an ohmic layer formed on a portion of an upper portion of the substrate, a Schottky layer formed on a portion of an upper portion of the ohmic layer, an insulating layer formed on a portion of the upper portion of the ohmic layer, a low-k material layer formed on a portion of the upper portion of the substrate, and a Schottky metal layer formed on portions of upper portions of the low-k material layer and the insulating layer.