公开(公告)号：US20220308285A1

公开(公告)日：2022-09-29

申请号：US17540439

申请日：2021-12-02

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dongjun SEO ,  Heuk PARK ,  Sanghwa YOO ,  Joon Ki LEE

IPC: G02B6/12 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/105

Abstract: A silicon photonics-based photodetector (PD) includes a silicon layer on which doped layers of different types are formed on a surface based on a first spacing based on a center line of an optical waveguide through which an optical signal moves, a germanium layer being stacked on an upper part of the silicon layer and formed with doped layers of different types on a surface based on a second spacing based on the center line of the optical waveguide, and a metal electrode configured to generate an electric field by being in contact with the doped layers of the silicon layer and the germanium layer.