SEMICONDUCTOR LIGHT RECEIVING ELEMENT

    公开(公告)号:US20240429331A1

    公开(公告)日:2024-12-26

    申请号:US18822267

    申请日:2024-09-01

    Abstract: In a semiconductor light receiving element having a light receiving part having a light absorption layer on a first surface side of a semiconductor substrate that is transparent to light with wavelengths in the infrared region for optical communication, a second surface side opposite to the first surface is provided with an inclined portion inclined at a predetermined angle with respect to the first surface in a region where transmitted light that has passed through the light absorption layer of incident light that has entered the light receiving part from the opposite side to the semiconductor substrate reaches, and a rough surface having irregularities with a height equal to or greater than the wavelength of the transmitted light is formed on the inclined portion, thereby reducing re-entry of the transmitted light into the light receiving part.

    SEMICONDUCTOR LIGHT RECEIVING DEVICE

    公开(公告)号:US20240405136A1

    公开(公告)日:2024-12-05

    申请号:US18776181

    申请日:2024-07-17

    Abstract: A semiconductor light receiving device (1) has a light receiving portion (6) with a light absorbing layer (4) on a first surface (2a) side of a semiconductor substrate (2) transparent to incident light in an infrared range for optical communications, a reflecting portion (11) in a region where light that was incident on the light receiving portion (6) and passed through the light absorbing layer (4) is reached on a second surface (2b) side opposite the first surface (2a) to reflect the light toward the second surface (2b), and end surfaces (2c, 2d) of the semiconductor substrate (2), where light reflected by the reflecting portion (11) and reflected by the second surface (2b) reaches, are formed as a rough surface having roughness with a height equal to or greater than the wavelength of the incident light.

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