METHODS OF FORMING PEROVSKITE FILMS
    1.
    发明申请
    METHODS OF FORMING PEROVSKITE FILMS 审中-公开
    形成PEROVSKITE膜的方法

    公开(公告)号:US20160068990A1

    公开(公告)日:2016-03-10

    申请号:US14784598

    申请日:2014-04-07

    Abstract: This disclosure provides methods for forming a perovskite film. Exemplary methods can include the steps of forming an amorphous layer on a substrate disposed in a reaction chamber, covering at least a portion of the amorphous layer with a barrier that at least partially prevents the first metal, the second metal, oxygen atoms, or a combination thereof from being released during annealing and annealing the amorphous layer to form a perovskite film. Formation of the amorphous layer on the substrate disposed in a reaction chamber may be effected by introducing a first compound comprising a first metal; introducing an oxidizing agent; and introducing a second compound comprising a second metal.

    Abstract translation: 本公开提供了形成钙钛矿膜的方法。 示例性方法可以包括以下步骤:在设置在反应室中的基底上形成非晶层,用至少部分地防止第一金属,第二金属,氧原子或至少一部分的屏障覆盖非晶层的至少一部分 其组合在退火和退火期间被释放,以形成非晶层以形成钙钛矿膜。 在设置在反应室中的基板上形成非晶层可以通过引入包含第一金属的第一化合物来实现; 引入氧化剂; 并引入包含第二金属的第二化合物。

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