公开(公告)号：US20230133632A1

公开(公告)日：2023-05-04

申请号：US17970180

申请日：2022-10-20

Applicant: Comadur SA

Inventor： Didier COCHET-MUCHY ,  Naser BERISHA ,  Pierry VUILLE

IPC: C30B29/20 ,  C30B15/34 ,  C30B17/00 ,  C01F7/02 ,  G04B39/00

Abstract: A method for manufacturing a sapphire single-crystal, including melting alumina and/or sapphire in a crucible, and bringing the molten alumina and/or sapphire in contact with a monocrystalline sapphire seed to make the molten alumina and/or sapphire crystallise progressively according to a growth direction to form the sapphire single-crystal. The monocrystalline sapphire seed has a rhombohedral crystallographic structure defining three crystallographic axes [A], [C] and [M] perpendicular to each other and respectively perpendicular to the crystallographic planes. The monocrystalline sapphire seed is a plate delimited by two planar faces which extend parallel to and at a distance from each other, is obtained from an initial sapphire single-crystal which is cut so that one of the crystallographic axes of the monocrystalline sapphire plate forms with a normal to the planar faces of the monocrystalline sapphire plate an angle whose value is comprised between 5 and 85°.