VIA GROUND STRUCTURES
    3.
    发明公开

    公开(公告)号:US20240355737A1

    公开(公告)日:2024-10-24

    申请号:US18304001

    申请日:2023-04-20

    CPC classification number: H01L23/5286 H01L21/76898 H01L23/481

    Abstract: In some aspects, the techniques described herein relate to an apparatus including: a semiconductor device substrate material; a first signal conductor incorporated into the semiconductor device substrate material; a second signal conductor incorporated into the semiconductor device substrate material; and a ground conductor incorporated into the semiconductor device substrate material between the first signal conductor and the second signal conductor, wherein the ground conductor includes a first elongated portion and a second elongated portion arranged at an angle relative to the first elongated portion.

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