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    Methods for dicing semiconductor wafers and semiconductor devices made by the methods
    1.
    发明授权
    Methods for dicing semiconductor wafers and semiconductor devices made by the methods 有权

    公开(公告)号：US11289378B2

    公开(公告)日：2022-03-29

    申请号：US16440063

    申请日：2019-06-13

    申请人： Cree, Inc.

    发明人： Kevin Schneider ,  Alexander Komposch

    IPC分类号： H01L21/78 ,  H01L21/304 ,  H01L21/268 ,  H01L33/00 ,  H01L29/66

    摘要： A method for forming semiconductor devices from a semiconductor wafer includes cutting a first surface of a semiconductor wafer to form a first region that extends partially through the semiconductor wafer and the first region has a bottom portion. The method further includes directing a beam of laser light to the semiconductor wafer such that the beam of laser light is focused within the semiconductor wafer between the first surface and the second surface thereof and the beam of laser light further cuts the semiconductor wafer by material ablation to form a second region aligned with the first region. A resulting semiconductor device is disclosed as well.

    CONTACT AND DIE ATTACH METALLIZATION FOR SILICON CARBIDE BASED DEVICES AND RELATED METHODS OF SPUTTERING EUTECTIC ALLOYS
    3.
    发明申请
    CONTACT AND DIE ATTACH METALLIZATION FOR SILICON CARBIDE BASED DEVICES AND RELATED METHODS OF SPUTTERING EUTECTIC ALLOYS 有权

    公开(公告)号：US20220028821A1

    公开(公告)日：2022-01-27

    申请号：US17494909

    申请日：2021-10-06

    申请人： Cree, Inc.

    发明人： Alexander Komposch ,  Kevin Schneider ,  Scott Sheppard

    IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768

    摘要： A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

    Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys
    4.
    发明授权
    Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys 有权

    公开(公告)号：US11152325B2

    公开(公告)日：2021-10-19

    申请号：US16548241

    申请日：2019-08-22

    申请人： Cree, Inc.

    发明人： Alexander Komposch ,  Kevin Schneider ,  Scott Sheppard

    IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768

    摘要： A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

    CONTACT AND DIE ATTACH METALLIZATION FOR SILICON CARBIDE BASED DEVICES AND RELATED METHODS OF SPUTTERING EUTECTIC ALLOYS
    5.
    发明申请
    CONTACT AND DIE ATTACH METALLIZATION FOR SILICON CARBIDE BASED DEVICES AND RELATED METHODS OF SPUTTERING EUTECTIC ALLOYS 有权

    公开(公告)号：US20210057370A1

    公开(公告)日：2021-02-25

    申请号：US16548241

    申请日：2019-08-22

    申请人： Cree, Inc.

    发明人： Alexander Komposch ,  Kevin Schneider ,  Scott Sheppard

    IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/768

    摘要： A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.