Abstract:
The invention relates to a photodetectors array that will be hybridized on a readout circuit (30) and realized from a wafer of semiconducting material (11). The wafer is divided into pixels (12), each pixel forming a photodetector, the pixels being separated from each other by separation means formed in the wafer and comprising a photogrid for photodetectors, each photodetector having a connection pad (18) to hybridize the photodetectors array to the readout circuit.
Abstract:
The invention relates to a circuit for reading charges comprising a capacitive means (C1, C2) with capacitance Ca to store charges and means of reading a voltage sampled at the terminals of the capacitive means. The capacitive means is built up from a first capacitive means (C1) and a second capacitive means (C2) with a capacitance Cb less than Ca. The read circuit comprises means of comparing the voltage read at the terminals of the capacitive means with a threshold value (Vthreshold) and means of controlling the transfer of charges stored in the first capacitive means to the second capacitive means when the voltage read at the terminals of the capacitive means exceeds the threshold value (Vthreshold). The invention is applicable to detection of radiation in the imagery field.
Abstract:
The invention concerns a charges circuit reader containing charges storage material (Tc), charges addressing (Ta) and charges/voltage conversion material (Aj) including a conversion capacity, addressing material enabling control of the supply, in the conversion material, of stored charges in the storage material. The circuit includes calibration material (Tccal, Tacal, Il, Ccal) to deliver representative information (Vs) of the charges stored in the stored material and material (K, I2) to select the conversion capacity from the said information. The invention applies to the reading of charges derived from the detection of infrared, visible or X rays wavelength radiation.