ORGANIC LIGHT-EMITTING DIODE HAVING AN INVERSE ENERGY LEVEL LAYER
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    发明申请
    ORGANIC LIGHT-EMITTING DIODE HAVING AN INVERSE ENERGY LEVEL LAYER 审中-公开
    具有反能级层的有机发光二极管

    公开(公告)号:US20150280164A1

    公开(公告)日:2015-10-01

    申请号:US14297640

    申请日:2014-06-06

    IPC分类号: H01L51/50 H01L51/00 H01L51/56

    摘要: An organic light-emitting diode (OLED) includes a first electrode, a hole injection layer formed on the first electrode, an inverse energy level layer formed on the hole injection layer, a hole transport layer formed on the inverse energy level layer, a light-emitting layer formed on the hole transport layer, an electron transport layer formed on the light-emitting layer, an electron injection layer formed on the electron transport layer, and a second electrode formed on the electron injection layer. The work function of the inverse energy level layer is higher than the highest occupied molecular orbital (HOMO) of the hole injection layer and the hole transport layer.

    摘要翻译: 有机发光二极管(OLED)包括第一电极,形成在第一电极上的空穴注入层,形成在空穴注入层上的反能级层,形成在反能级层上的空穴传输层,光 形成在空穴传输层上的发光层,形成在发光层上的电子传输层,形成在电子传输层上的电子注入层和形成在电子注入层上的第二电极。 反能级层的功函数高于空穴注入层和空穴传输层的最高占据分子轨道(HOMO)。