公开(公告)号：US20210305943A1

公开(公告)日：2021-09-30

申请号：US16625671

申请日：2016-01-26

Applicant: CHINA ELECTRONIC TECHNOLOGY CORPORATION, 24TH RESEARCH INSTITUTE

Inventor： DAIGUO XU ,  GANGYI HU ,  RUZHANG LI ,  JIAN'AN WANG ,  GUANGBING CHEN ,  YUXIN WANG ,  TAO LIU ,  LU LIU ,  MINMING DENG ,  HANFU SHI ,  XU WANG

IPC: H03F1/22

Abstract: Provided in the present invention is a transconductance amplifier based on a self-biased cascode structure. The transconductance amplifier includes a self-biased cascode input-stage structure constituted by PMOS (P-channel Metal Oxide Semiconductor) input transistors M1, M2, M3 and M4, a self-biased cascode first-stage load structure constituted by NMOS (N-channel Metal Oxide Semiconductor) transistors M5, M6, M7 and M8, a second-stage common-source amplifier structure constituted by an NMOS transistor M9 and a PMOS transistor M10, a bias circuit structure constituted by NMOS transistors M11 and M12 and a PMOS transistor M13, an amplifier compensation capacitor Cc, an amplifier load capacitor CL, a reference current source Iref and a PMOS transistor MO that provides a constant current source function. Further provided in the present invention is a transconductance amplifier based on a self-biased cascode structure, which adopts an NMOS transistor as an input transistor. Both input transistors and load transistors of a first-stage amplifier of the present invention adopt self-biased cascode structures, such that the output impedance and the DC gain of the first-stage amplifier are increased. Substrate voltages of the MOS transistors of the first-stage amplifier are provided by an amplifier bias circuit. Owing to a connection mode of the compensation capacitor Cc, a higher figure of merit is achieved.

公开(公告)号：US20180054168A1

公开(公告)日：2018-02-22

申请号：US15555543

申请日：2016-01-26

Applicant: China Electronic Technology Corporation, 24th Research Institute

Inventor： DAIGUO XU ,  GANGYI HU ,  RUZHANG LI ,  JIAN'AN WANG ,  GUANGBING CHEN ,  YUXIN WANG ,  TAO LIU ,  LU LIU ,  MINMING DENG ,  HANFU SHI ,  XU WANG

IPC: H03F1/14 ,  H03F3/45

CPC classification number: H03F1/14 ,  H03F3/45183 ,  H03F3/4521 ,  H03F2203/45288 ,  H03F2203/45352 ,  H03F2203/45526

Abstract: The present invention provides a frequency-compensated transconductance amplifier, includes an input stage consisting of NMOS transistors M1 and M2, a first-stage active load consisting of PMOS transistors M3 and M4, a first-stage tail current source consisting of a constant current source Iss, a second-stage input transistor consisting of a PMOS transistor M5, a second-stage constant current source consisting of an NMOS transistor M6, a load capacitor consisting of a capacitor CL, and a frequency compensation network formed by sequentially connecting a gain stage GAIN, a compensating resistor Rc and a compensating capacitor Cc in series.