公开(公告)号：US20160137509A1

公开(公告)日：2016-05-19

申请号：US14899985

申请日：2014-06-26

Applicant: CENTER FOR ADVANCED SOFT ELECTRONICS

Inventor： KILWON CHO ,  HYOJIN BONG

IPC: C01B31/04

CPC classification number: C01B32/186 ,  C01B2204/32 ,  C23C16/0272 ,  C23C16/26 ,  Y02P20/149

Abstract: Disclosed are graphene and a method of manufacturing the same. The method of manufacturing graphene includes forming a metal catalytic layer on a substrate (Step a), providing a cover member on the metal catalytic layer of Step a (Step b), and growing graphene on the metal catalytic layer of Step b by performing chemical vapor deposition (Step c), whereby the size of the micro-scale grain boundary on the surface of the metal catalyst can be reduced by simultaneously promoting the aggregation of metal catalytic molecules in a chemical vapor deposition device and preventing the evaporation of the metal catalyst due to the effect of the cover member, ultimately improving the quality of synthesized graphene, including the transparency thereof. Also, a graphene sheet can be grown under various concentrations of carbon source gas, and efficient mass production thereof is possible in a chemical vapor deposition device having a confined space.

Abstract translation: 公开了石墨烯及其制造方法。 制造石墨烯的方法包括在基材上形成金属催化剂层（步骤a），在步骤a（步骤b）的金属催化剂层上提供覆盖部件，并在步骤b的金属催化剂层上生长石墨烯， 气相沉积（步骤c），通过同时促进化学气相沉积装置中的金属催化分子的聚集并防止金属催化剂的蒸发，可以降低金属催化剂表面上的微尺度晶界的尺寸 由于覆盖件的作用，最终提高了合成石墨烯的质量，包括其透明度。 此外，石墨烯片可以在各种浓度的碳源气体下生长，并且在具有有限空间的化学气相沉积装置中可以有效地批量生产石墨烯片。