公开(公告)号：US11486056B2

公开(公告)日：2022-11-01

申请号：US16791077

申请日：2020-02-14

Applicant: Borealis Technical Limited

Inventor： Michael J. Hinton ,  Joseph M. Fine ,  Peter Vanderwicken ,  Jonathan S. Edelson ,  John D. Birge

IPC: C30B33/08 ,  C30B33/00 ,  C30B29/60 ,  B82Y10/00

Abstract: Reduced and low work function materials capable of optimizing electron emission performance in a range of vacuum and nanoscale electronic devices and processes and a method for reducing work function and producing reduced and low work function materials are described. The reduced and low work function materials advantageously may be made from single crystal materials, preferably metals, and from amorphous materials with optimal thicknesses for the materials. A surface geometry is created that may significantly reduce work function and produce a reduced or low work function for the material. It is anticipated that low and ultra-low work function materials may be produced by the present invention and that these materials will have particular utility in the optimization of electron emissions in a wide range of vacuum microelectronics and other nanoscale electronics and processes.

公开(公告)号：US20200263322A1

公开(公告)日：2020-08-20

申请号：US16791077

申请日：2020-02-14

Applicant: Borealis Technical Limited

Inventor： Michael J. Hinton ,  Joseph M. Fine ,  Peter Vanderwicken ,  Jonathan S. Edelson ,  John D. Birge

IPC: C30B33/00 ,  C30B33/08 ,  C30B29/60

Abstract: Reduced and low work function materials capable of optimizing electron emission performance in a range of vacuum and nanoscale electronic devices and processes and a method for reducing work function and producing reduced and low work function materials are described. The reduced and low work function materials advantageously may be made from single crystal materials, preferably metals, and from amorphous materials with optimal thicknesses for the materials. A surface geometry is created that may significantly reduce work function and produce a reduced or low work function for the material. It is anticipated that low and ultra-low work function materials may be produced by the present invention and that these materials will have particular utility in the optimization of electron emissions in a wide range of vacuum microelectronics and other nanoscale electronics and processes.