公开(公告)号：US20150074474A1

公开(公告)日：2015-03-12

申请号：US14040374

申请日：2013-09-27

Applicant: BROADCOM CORPORATION

Inventor： Mohammad Issa ,  Rakesh Kumar Kinger

IPC: G06F11/20

CPC classification number: G11C29/4401 ,  G11C29/78 ,  G11C2029/0407 ,  G11C2029/4402

Abstract: A device for repairing a memory device may include spare memory blocks that may replace corresponding memory blocks that include at least one non-operational memory cell. One or more registers may be coupled in a chain to store memory repair information. A memory repair module may identify, upon a power-up test of the memory device, non-operational memory cells, which are incremental to previously identified defective memory cells in previous power-up tests, and may provide corresponding memory repair information of the identified non-operational memory cells. A logic circuit may block access to one or more registers and may facilitate storing, in one or more unblocked registers, the corresponding memory repair information of the identified one or more non-operational memory cells. The memory repair module may swap a memory block including the identified non-operational memory cells with a spare memory block based on content of the one or more unblocked registers.

Abstract translation: 用于修复存储器设备的设备可以包括备用存储器块，其可替代包括至少一个非操作存储器单元的对应存储器块。 一个或多个寄存器可以耦合在链中以存储存储器修复信息。 存储器修复模块可以在存储器件的上电测试时识别在先前的上电测试中对先前识别的故障存储器单元增量的非操作存储器单元，并且可以提供所识别的对应的存储器修复信息 非操作存储单元 逻辑电路可以阻止对一个或多个寄存器的访问，并且可以有助于在一个或多个未阻塞寄存器中存储所识别的一个或多个非操作存储器单元的相应存储器修复信息。 存储器修复模块可以基于一个或多个未阻塞寄存器的内容，利用备用存储块来交换包括所识别的非操作存储器单元的存储器块。