公开(公告)号：US09023741B2

公开(公告)日：2015-05-05

申请号：US14084368

申请日：2013-11-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xianghua Wang ,  Xianfeng Xiong ,  Longzhen Qiu ,  Ze Liu

IPC: H01L21/00 ,  H01L51/00

CPC classification number: H01L51/0005 ,  Y10S438/906

Abstract: A method for surface treatment is disclosed which relates to the technical field of producing thin-film devices by printing and solves the problem that the treatment of a substrate surface in the prior art can hardly meet the requirement for printing. The method for surface treatment includes a step of subjecting a surface of a base plate having at least two kinds of substrate patterns formed thereon to a surface treatment for forming a self-assembled monomolecular layer for at least once and a surface treatment by ultraviolet-ozone cleaning, so as to make the difference between the surface energies of the substrate patterns larger or smaller. The method for surface treatment of the invention is suitable for the surface treatment of the substrate surface during producing thin-film devices by printing.

Abstract translation: 公开了一种用于表面处理的方法，其涉及通过印刷制造薄膜器件的技术领域，并且解决了现有技术中的衬底表面的处理几乎不能满足打印要求的问题。 表面处理方法包括：将具有形成在其上的至少两种基板图案的基板的表面进行表面处理以形成自组装单分子层至少一次并通过紫外 - 臭氧进行表面处理的步骤 清洁，以使衬底图案的表面能量差异更大或更小。 本发明的表面处理方法适用于通过印刷制造薄膜器件时的基板表面的表面处理。

公开(公告)号：US20150001513A1

公开(公告)日：2015-01-01

申请号：US14354755

申请日：2013-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xianghua Wang ,  Xianfeng Xiong ,  Ze Liu ,  Longzhen Qiu

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0533 ,  H01L51/0005 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor comprises: a substrate; a gate electrode layer (21) and a source/drain electrode layer (24), formed on the substrate; an organic semiconductor layer (25), formed between source and drain electrodes (24) of the source/drain electrode layer; and an organic insulating layer (23), formed between the gate electrode layer (21) and the organic semiconductor layer (25) and made from an organic polymer material.

Abstract translation: 提供有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括：基板; 形成在所述基板上的栅极电极层（21）和源极/漏极电极层（24） 形成在源极/漏极电极层的源极和漏极之间的有机半导体层（25）; 和形成在栅电极层（21）和有机半导体层（25）之间并由有机聚合物材料制成的有机绝缘层（23）。

公开(公告)号：US09698364B2

公开(公告)日：2017-07-04

申请号：US14388544

申请日：2013-04-07

Applicant: BOE Technology Group Co., Ltd.

Inventor： Longzhen Qiu ,  Xiang Feng ,  Xianghua Wang ,  Ze Liu

IPC: H01L51/05 ,  B05C1/00 ,  H01L51/00

CPC classification number: H01L51/0545 ,  B05C1/00 ,  H01L51/0003 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0096

Abstract: An organic thin film transistor, a preparing method thereof, and a preparation equipment. The preparation equipment of an organic thin film transistor comprises: forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and source-drain electrodes on a substrate; the step of forming the organic semiconductor layer comprises: blade-coating a solution in which an organic semiconductor material used to forming the organic semiconductor layer is dissolved to form the organic semiconductor layer. The preparing method can avoid the difference between the edge and the center of the substrate caused by the impact of centripetal force when a spin-coating method is applied, so that the yield of the organic thin film transistor devices is improved.

公开(公告)号：US09263686B2

公开(公告)日：2016-02-16

申请号：US14354755

申请日：2013-11-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xianghua Wang ,  Xianfeng Xiong ,  Ze Liu ,  Longzhen Qiu

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

CPC classification number: H01L51/0533 ,  H01L51/0005 ,  H01L51/0529 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor and a manufacturing method thereof are provided. The organic thin film transistor comprises: a substrate; a gate electrode layer (21) and a source/drain electrode layer (24), formed on the substrate; an organic semiconductor layer (25), formed between source and drain electrodes (24) of the source/drain electrode layer; and an organic insulating layer (23), formed between the gate electrode layer (21) and the organic semiconductor layer (25) and made from an organic polymer material.

Abstract translation: 提供有机薄膜晶体管及其制造方法。 有机薄膜晶体管包括：基板; 形成在所述基板上的栅极电极层（21）和源极/漏极电极层（24） 形成在源极/漏极电极层的源极和漏极之间的有机半导体层（25）; 和形成在栅电极层（21）和有机半导体层（25）之间并由有机聚合物材料制成的有机绝缘层（23）。

公开(公告)号：US20150060800A1

公开(公告)日：2015-03-05

申请号：US14388544

申请日：2013-04-07

Applicant: BOE Technology Group, Co., Ltd.

Inventor： Longzhen Qiu ,  Xiang Feng ,  Xianghua Wang ,  Ze Liu

IPC: H01L51/05 ,  B05C1/00 ,  H01L51/00

CPC classification number: H01L51/0545 ,  B05C1/00 ,  H01L51/0003 ,  H01L51/0055 ,  H01L51/0094 ,  H01L51/0096

Abstract: An organic thin film transistor, a preparing method thereof, and a preparation equipment. The preparation equipment of an organic thin film transistor comprises: forming a gate electrode, a gate insulating layer, an organic semiconductor layer, and source-drain electrodes on a substrate; the step of forming the organic semiconductor layer comprises: blade-coating a solution in which an organic semiconductor material used to forming the organic semiconductor layer is dissolved to form the organic semiconductor layer. The preparing method can avoid the difference between the edge and the center of the substrate caused by the impact of centripetal force when a spin-coating method is applied, so that the yield of the organic thin film transistor devices is improved.

Abstract translation: 有机薄膜晶体管，其制备方法和制备设备。 有机薄膜晶体管的制备设备包括：在基板上形成栅电极，栅极绝缘层，有机半导体层和源漏电极; 形成有机半导体层的步骤包括：刮涂其中用于形成有机半导体层的有机半导体材料的溶液以形成有机半导体层的溶液。 制备方法可以避免当施加旋涂方法时由向心力的冲击引起的衬底的边缘和中心之间的差异，从而提高有机薄膜晶体管器件的产量。