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公开(公告)号：US20210210529A1
公开(公告)日：2021-07-08
申请号：US16074283
申请日：2018-01-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tianmin ZHOU , Wei YANG , Lizhong WANG , Xiaming ZHU , Jipeng SONG
IPC: H01L27/12
Abstract: A thin film transistor, a method for manufacturing the same and a display device are disclosed. The thin film transistor includes source-drain electrodes and a passivation layer; an isolation layer is disposed between the source-drain electrodes and the passivation layer, and the isolation layer overlays the source-drain electrodes.
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