公开(公告)号：US20220416091A1

公开(公告)日：2022-12-29

申请号：US17776923

申请日：2021-06-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui QIANG ,  Chao LI ,  Huiqin ZHANG ,  Li QIANG ,  Feng GUAN ,  Zhiwei LIANG

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32

Abstract: A thin film transistor includes an active layer, first and second electrodes, and a third doped pattern. The active layer has a channel region, and a first electrode region and a second electrode region, the first electrode region has a first ion doping concentration, and the second electrode region has a second ion doping concentration. The first electrode and the second electrode are disposed on a side of the active layer in the thickness direction. The first electrode is coupled to the first electrode region, and the second electrode is coupled to the second electrode region. The third doped pattern is disposed between the first electrode and the first electrode region, and in direct contact with the first electrode and the first electrode region. The third doped pattern has a third ion doping concentration, and the third ion doping concentration is different from the first ion doping concentration.

公开(公告)号：US20220020780A1

公开(公告)日：2022-01-20

申请号：US17413221

申请日：2020-06-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhaohui QIANG ,  Li QIANG ,  Chao LUO ,  Huiqin ZHANG ,  Rui HUANG ,  Zhi WANG

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786

Abstract: A thin film transistor includes a base, a first electrode, an active pattern, a gate insulating layer, a gate and a second electrode. The active pattern includes a first semiconductor pattern, a second semiconductor pattern and a third semiconductor pattern. A material of one of the first semiconductor pattern and the third semiconductor pattern includes a semiconductor material and N-type doped ions, and a material of another of the first semiconductor pattern and the third semiconductor pattern includes the semiconductor material and P-type doped ions. An orthogonal projection of the gate on the base is non-overlapping with an orthogonal projection of the active pattern on the base.