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1.
公开(公告)号:US20240139810A1
公开(公告)日:2024-05-02
申请号:US18497480
申请日:2023-10-30
发明人: Adam BYRD
IPC分类号: B22F10/14 , B22F1/00 , B22F3/10 , B22F5/10 , B33Y10/00 , B33Y80/00 , H01M8/1246 , H01M8/2404
CPC分类号: B22F10/14 , B22F1/09 , B22F3/1021 , B22F5/10 , B33Y10/00 , B33Y80/00 , H01M8/1246 , H01M8/2404 , B22F2301/20 , B22F2301/35
摘要: A method includes binder jet printing a metal alloy powder or a metal powder mixture to form a green interconnect, debinding the green interconnect, and sintering the green interconnect to form a metal alloy interconnect for an electrochemical stack.
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公开(公告)号:US20240347739A1
公开(公告)日:2024-10-17
申请号:US18624584
申请日:2024-04-02
发明人: Zigui LU , Guoliang XIAO , Tad ARMSTRONG , Keji PAN , Adam BYRD
IPC分类号: H01M8/0215 , C04B24/38 , C04B35/64 , C04B41/50 , H01M8/12 , H01M8/2404
CPC分类号: H01M8/0215 , C04B24/383 , C04B35/64 , C04B41/5046 , H01M8/12 , H01M8/2404 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3281 , C04B2235/6585 , H01M2008/1293
摘要: A method of forming a protective layer on an interconnect for an electrochemical cell stack includes coating at least one side of the interconnect with a metal oxide powder to form a protective layer, sintering the coated interconnect in an inert atmosphere to at least partially reduce the protective layer, and oxidizing the sintered interconnect in an oxidizing atmosphere to oxidize and densify the protective layer.
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3.
公开(公告)号:US20240093376A1
公开(公告)日:2024-03-21
申请号:US18470064
申请日:2023-09-19
发明人: Adam BYRD , Zigui LU , Guoliang XIAO , Tad ARMSTRONG , Harald HERCHEN , Travis SCHMAUSS , Keji PAN
IPC分类号: C23C24/08 , C25B9/65 , H01M8/0206 , H01M8/0217 , H01M8/0226 , H01M8/0228
CPC分类号: C23C24/082 , C25B9/65 , H01M8/0206 , H01M8/0217 , H01M8/0226 , H01M8/0228
摘要: A method of forming a protective coating on an interconnect for an electrochemical device stack includes providing a powder on the interconnect and laser sintering the powder.
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4.
公开(公告)号:US20240082916A1
公开(公告)日:2024-03-14
申请号:US18458298
申请日:2023-08-30
发明人: Adam BYRD , Adil ASHARY
IPC分类号: B22F7/06 , B22F3/105 , H01M8/021 , H01M8/0217 , H01M8/0228 , H01M8/1246
CPC分类号: B22F7/064 , B22F3/105 , H01M8/021 , H01M8/0217 , H01M8/0228 , H01M8/1246 , H01M2008/1293
摘要: A method of forming an interconnect for an electrochemical device stack includes loading a die with an interconnect material comprising an interconnect body powder comprising chromium and iron, and spark plasma sintering (SPS) the interconnect material to form a body of the interconnect.
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