Abstract:
Single select line, three transistor dynamic memory cells require precise control of the trilevel select line voltage to insure that only the intended state is selected. Typically, one transistor is associated with a write state; a second transistor, with a read state; and a third transistor, with the storage function. A dual threshold dynamic memory cell, wherein the threshold voltage of the write transistor is substantially different than the threshold voltage of the read transistor, significantly relaxes the precise select voltage control requirement. The different threshold voltages can be provided at the time of manufacture by using conventional techniques, such as selective ion implantation or selective gate oxidation.
Abstract:
An electroluminescent PN junction gallium phosphide diode is fabricated with the P-type zone rich in zinc oxygen pairs and the N-type zone rich in isoelectronic nitrogen. In this diode, the apparent color of the emitted light can be controlled by varying the electrical current in the diode, from the red through the yellow to the green portions of the color spectrum. Thereby, an electroluminescent diode device is afforded, having a threefold (or more) positive standby signal characteristic.