Dual threshold, three transistor dynamic memory cell
    1.
    发明授权
    Dual threshold, three transistor dynamic memory cell 失效
    DUAL THRESHOLD,三个晶体管动态记忆体

    公开(公告)号:US3876991A

    公开(公告)日:1975-04-08

    申请号:US37805273

    申请日:1973-07-11

    CPC classification number: G11C11/405

    Abstract: Single select line, three transistor dynamic memory cells require precise control of the trilevel select line voltage to insure that only the intended state is selected. Typically, one transistor is associated with a write state; a second transistor, with a read state; and a third transistor, with the storage function. A dual threshold dynamic memory cell, wherein the threshold voltage of the write transistor is substantially different than the threshold voltage of the read transistor, significantly relaxes the precise select voltage control requirement. The different threshold voltages can be provided at the time of manufacture by using conventional techniques, such as selective ion implantation or selective gate oxidation.

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