公开(公告)号：US3904449A

公开(公告)日：1975-09-09

申请号：US46851974

申请日：1974-05-09

Applicant: BELL TELEPHONE LABOR INC

Inventor： DILORENZO JAMES VINCENT ,  LUTHER LARS CHRISTIAN

IPC: H01L29/864 ,  H01L7/36

CPC classification number: H01L29/864 ,  Y10S148/056 ,  Y10S148/057 ,  Y10S148/067 ,  Y10S148/129 ,  Y10S148/139

Abstract: High efficiency GaAs Schottky barrier IMPATT diodes comprising a non-uniformly doped depletion region are fabricated by instantaneously injecting a known volume of a known concentration of dopant at a known pressure during chemical vapor deposition epitaxial growth of the n layer forming the depletion region. This technique has yielded n layers 150 Angstroms thick, doped to carrier concentration values as high as 1018 cm 3, with precise control of the position of the n layer within the depletion region.

Abstract translation: 包含非均匀掺杂的耗尽区的高效GaAs肖特基势垒IMPATT二极管通过在形成耗尽区的n层的化学气相沉积外延生长期间以已知的压力瞬时注入已知体积的已知浓度的掺杂剂来制造。 这种技术已经产生了150埃厚的n +层，掺杂到高达1018厘米3的载流子浓度值，精确控制了耗尽区内n +层的位置。