Abstract:
THE SPECIFICATION DESCRIBES A NEW TYPE OF PHOTOCATHODE COMPRISING A SEMICONDUCTOR DIODE-ARRAY LIGHT SENSING ELEMENT IN COMBINATION WITH A PHOTOEMISSIVE COATING. THE SPATIAL PATTERN OF ELECTRON EMISSION FROM THE PHOTOEMITTER IS CONTROLLED BY THE LOCALIZED FIELD IN THE DIODE ARRAY. THE LOCAL INTENSITY OF THIS FIELD GIVES A SPATIAL REPRESENTATION OF THE IMAGE INCIDENT ON THE DIODE ARRAY. WITH A SILICON DIODE ARRAY INFRARED AND X-RAY RESPONSE ARE INHERENT.