公开(公告)号：US12106970B2

公开(公告)日：2024-10-01

申请号：US17919520

申请日：2021-04-02

申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

发明人： Qiushi Xie ,  Xiaoping Shi ,  Qingjun Zhou ,  Dongsan Li ,  Chun Wang ,  Yiming Zhang

IPC分类号： H01L21/308 ,  H01L23/48

CPC分类号： H01L21/3081 ,  H01L23/481

摘要： The present disclosure discloses a pattern sheet, a semiconductor intermediate product, and a hole etching method. The pattern sheet includes a substrate, a dielectric layer, and a mask structure. The mask structure includes a multi-layer mask layer. An uppermost mask layer is a photoresist layer. A thickness of each layer of the mask layer and etching selectivity ratios between the layers below the mask layer satisfy that in each two neighboring layers of the mask layer, a lower layer of the mask layer is etched to form a through-hole penetrating a thickness of the lower layer of the mask layer, a remaining thickness of the upper layer of the mask layer is greater than or equal to zero.