公开(公告)号：US20230046318A1

公开(公告)日：2023-02-16

申请号：US17778429

申请日：2020-11-16

申请人： BASF SE ,  Wayne State University

发明人： Sinja Verena KLENK ,  Alexander Georg HUFNNAGEL ,  Hagen WILMER ,  Daniel LÖFFLER ,  Sabine WEIGUNY ,  Kerstin SCHIERLE-ARNDT ,  Charles Hartger WINTER ,  Nilanka WEERATHUNGA SIRIKKATHUGE

IPC分类号： C23C16/455 ,  C23C16/18

摘要： The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R′ or NR′2, wherein at least one X is H, n is 1 or 2, and R and R′ is an alkyl group, an alkenyl group, an aryl group, or a silyl group.