-
公开(公告)号：US10748272B2
公开(公告)日：2020-08-18
申请号：US15982918
申请日：2018-05-17
发明人： Ishai Schwarzband , Yan Avniel , Sergey Khristo , Mor Baram , Shimon Levi , Doron Girmonsky , Roman Kris
摘要： An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
-
公开(公告)号：US20200380668A1
公开(公告)日：2020-12-03
申请号：US16995077
申请日：2020-08-17
发明人： Ishai Schwarzband , Yan Avniel , Sergey Khristo , Mor Baram , Shimon Levi , Doron Girmonsky , Roman Kris
摘要： An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
-
公开(公告)号：US11995848B2
公开(公告)日：2024-05-28
申请号：US17209086
申请日：2021-03-22
发明人： David Uliel , Yan Avniel , Bobin Mathew Skaria , Oz Fox-Kahana , Gal Daniel Gutterman , Atai Baldinger , Murad Muslimany , Erez Lidor
CPC分类号： G06T7/30 , G06F18/22 , G06T5/50 , G06T7/001 , H01J37/261 , G06T2207/20221 , G06T2207/30148 , H01J2237/221
摘要： There is provided a system and method of examination of a semiconductor specimen, comprising: obtaining a sequence of frames of an area of the specimen acquired by an electron beam tool configured to scan the area from a plurality of directions, the sequence comprising a plurality of sets of frames each acquired from a respective direction; and registering the plurality of sets of frames and generating an image of the specimen based on result of the registration, comprising: performing, for each direction, a first registration among the set of frames acquired therefrom, and combining the registered set of frames to generate a first composite frame, giving rise to a plurality of first composite frames respectively corresponding to the plurality of directions; and performing a second registration among the plurality of first composite frames, and combining the registered plurality of first composite frames to generate the image of the specimen.
-
公开(公告)号：US11301983B2
公开(公告)日：2022-04-12
申请号：US16995077
申请日：2020-08-17
发明人： Ishai Schwarzband , Yan Avniel , Sergey Khristo , Mor Baram , Shimon Levi , Doron Girmonsky , Roman Kris
摘要： An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
-
-
-
搜索结果
4 条记录 (耗时 0.014 秒)
