公开(公告)号：US20190371617A1

公开(公告)日：2019-12-05

申请号：US16506520

申请日：2019-07-09

Applicant: Applied Materials, Inc.

Inventor： Chang Wook DOH ,  Zhibin WANG ,  Byungkook KONG ,  Sang Wook KIM ,  Sang-Jun CHOI

IPC: H01L21/3065 ,  H01J37/32

Abstract: Systems and methods discussed herein are directed towards processing of substrates, including forming a plurality of features in a target layer on a substrate. The formation of the plurality of features includes a main etch operation that forms the plurality of features to a first depth in the target layer. The main etch operation is followed by a phase shift sync pulsing (PSSP) operation, and these two operations are repeated iteratively to form the features to a predetermined depth. The PSSP operation includes one or more cycles of RF source power and RF bias power, this cycle deposits a protective coating in and on the features and then etches a portion of the protective coating to expose portions of the feature.

公开(公告)号：US20190198338A1

公开(公告)日：2019-06-27

申请号：US15853243

申请日：2017-12-22

Applicant: Applied Materials, Inc.

Inventor： Sang Wook KIM ,  Zhibin WANG ,  Kyoungjin LEE ,  Byungkook KONG

IPC: H01L21/308 ,  H01L21/02 ,  H01L21/311 ,  H01L21/027

Abstract: Embodiments of the present disclosure generally provide a method and apparatus for forming features in a material layer utilizing EUV technologies. In one embodiment, a method of patterning a substrate includes disposing a patterned photoresist layer on a mask layer disposed on a substrate, wherein the patterned photoresist layer has openings with different widths defined in the patterned photoresist layer, forming a compensatory layer along sidewalls of the patterned photoresist layer to modify the widths of the openings and etching the mask layer through the openings with the modified width.