公开(公告)号：US20230023235A1

公开(公告)日：2023-01-26

申请号：US17477413

申请日：2021-09-16

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Yun TAEWOONG ,  Shirish A. PETHE ,  Kai WU ,  Nobuyuki SASAKI ,  Wei LEI

IPC: H01L21/768

Abstract: Embodiments of methods and associated apparatus for filling a feature in a substrate are provided herein. In some embodiments, a method of filling a feature in a substrate includes: depositing a seed layer of tungsten nitride in the feature via a physical vapor deposition (PVD) process; depositing a liner layer of tungsten on the seed layer of tungsten nitride in the feature via a PVD process; and subsequently filling the feature with a tungsten bulk fill via a chemical vapor deposition (CVD) process.